Datasheet > HSC3417

HSC3417

更新时间： 2024-09-23 22:48:31

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
3页	37K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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HSC3417 数据手册

Spec. No. : HE6618-C

Issued Date : 1994.05.12

Revised Date : 2000.10.01

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HSC3417

NPN EPITAXIAL PLANAR TRANSISTOR

Features

• High–Definition CRT Display Video Output Applications

• High Breakdown Voltage: BVCEO=300V

(Ta=25°C)

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -50 ~ +150 °C

Junction Temperature ................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ................................................................................... 1.2 W

Total Power Dissipation (Tc=25°C) ...................................................................................... 7 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage.................................................................................... 300 V

BVCEO Collector to Emitter Voltage................................................................................. 300 V

BVEBO Emitter to Base Voltage........................................................................................... 5 V

IC Collector Current....................................................................................................... 100 mA

(Ta=25°C)

Electrical Characteristics

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

ICBO

300

IC=100uA

IC=1mA

IE=10uA

VCB=200V

VEB=4V

IC=20mA, IB=2mA

IC=10mA, VCE=10V

IC=10mA ,VCE=30V, f=100MHz

VCB=30V, f=1MHz

100

600

320

IEBO

*VCE(sat)

*VBE(sat)

*hFE

Cob

2.6

MHz

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

Classification Of hFE

Rank

Range

40-80

60-120

100-200 160-320

HSMC Product Specification

12 3

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