Datasheet > HSC2625

HSC2625

更新时间： 2024-09-23 22:48:31

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
2页	26K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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HSC2625 数据手册

Spec. No. : HR200201

Issued Date : 1996.03.14

Revised Date : 2002.08.13

Page No. : 1/2

HI-SINCERITY

MICROELECTRONICS CORP.

HSC2625

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HSC2625 is designed for triple diffused planer type high voltage,

high speed switching applications.

TO-3P

Absolute Maximum Ratings (Ta=25°C)

• Maximum Temperatures

Storage Temperature ........................................................................................... -55 ~ +150 °C

Junction Temperature.................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25°C) .................................................................................... 80 W

• Maximum Voltages and Currents

VCBO Collector to Base Voltage....................................................................................... 450 V

VCEO Collector to Emitter Voltage.................................................................................... 400 V

VEBO Emitter to Base Voltage.............................................................................................. 7 V

IC Collector Current ............................................................................................................ 10 A

IB Base Current..................................................................................................................... 3 A

Characteristics (Ta=25°C)

Symbol

BVCBO

BVCEO

BVEBO

ICBO

Min.

450

400

Typ.

Max.

Unit

Test Conditions

IC=1mA

IC=10mA

IE=100uA

VCB=450V

IEBO

100

1.2

1.5

VEB=7V

*VCE(sat)

*VBE(sat)

*hFE1

IC=4A, IB=800mA

IC=0.5A, VCE=5V

IC=4A, VCE=5V

*hFE2

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

HSC2625

HSMC Product Specification

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