生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最大集电极电流 (IC): | 0.1 A | 配置: | Single |
最小直流电流增益 (hFE): | 120 | 最高工作温度: | 150 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.625 W |
子类别: | Other Transistors | 表面贴装: | NO |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HSC226 | HITACHI |
获取价格 |
Silicon Schottky Barrier Diode | |
HSC226 | RENESAS |
获取价格 |
Silicon Schottky Barrier Diode for High Speed Switching | |
HSC226 | KEXIN |
获取价格 |
Silicon Schottky Barrier Diode | |
HSC226 | SEMTECH |
获取价格 |
SILICON SCHOTTKY BARRIER DIODE | |
HSC226 | TYSEMI |
获取价格 |
Ultra small Flat Package (UFP) is suitable for surface mount design | |
HSC22DRAH | ETC |
获取价格 |
CONN EDGE DUAL FMALE 44POS 0.100 | |
HSC22DRAH-S734 | ETC |
获取价格 |
CONN EDGE DUAL FMALE 44POS 0.100 | |
HSC22DRAI | ETC |
获取价格 |
CONN EDGE DUAL FMALE 44POS 0.100 | |
HSC22DRAI-S734 | ETC |
获取价格 |
CONN EDGE DUAL FMALE 44POS 0.100 | |
HSC22DRAN | ETC |
获取价格 |
CONN EDGE DUAL FMALE 44POS 0.100 |