Spec. No. : HE6523
Issued Date : 1992.11.25
Revised Date : 2001.06.06
Page No. : 1/3
HI-SINCERITY
MICROELECTRONICS CORP.
HSC1815
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSC1815 is designed for use in driver stage of AF amplifier
general purpose amplification.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 400 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 60 V
VCEO Collector to Emitter Voltage ..................................................................................... 50 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current....................................................................................................... 150 mA
IB Base Current ............................................................................................................... 50 mA
(Ta=25°C)
Characteristics
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=60V, IE=0
BVCBO
BVCEO
BVEBO
ICBO
60
50
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
nA
nA
mV
V
100
100
250
1
700
-
IEBO
VEB=5V, IC=0
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
-
-
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=2mA
VCE=6V, IC=150mA
VCE=10V, IC=1mA, f=100MHz
VCB=10V, f=1MHz, IE=0
120
25
80
-
-
MHz
pF
Cob
3.5
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE1
Rank
Y
GR
200-400
BL
350-700
Range
120-240
HSC1815
HSMC Product Specification