Datasheet > HSBD439

HSBD439

更新时间： 2024-02-14 23:37:17

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
1页	234K
描述
NPN SILICON TRANSISTOR

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数据手册

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HSBD439 数据手册

NPN S I L I C O N T R A N S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

HSBD439

█ APPLICATIONS

Medium Power Linear switching Applications

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

T_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation（T_c=25℃）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 36W

1―Emitter, E

2―Collector，C

3―Base，B

_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 60V

_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 60V

_CES— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 60V

_EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 5V

I_C— — Collector Curren（t Pulse）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 7A

I_C— — Collector Curren（t DC）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 4A

I_B— — Base Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 1A

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Collector Cut-off Current

Emitter Cut-off Current

Collector Cut-off Current

Min

Typ

Max Unit

Test Conditions

ICBO

IEBO

ICES

V_CB=60V, I_E=0

100 μA

1 mA

V_EB=5V, I_C=0

V_CE=60V, V_EB=0

V_CE=5V, I_C=10mA

V_CE=1V, I_C=500mA

V_CE=1V, I_C=2A

100 μA

*HFE（1） DC Current Gain

20 130

40 140

*HFE（2） DC Current Gain

*HFE（3） DC Current Gain

*VCE(sat) Collector- Emitter Saturation Voltage

*VBE(on1) Base-Emitter On Voltage

*VBE(on2) Base-Emitter On Voltage

VCEO(sus) Collector-Emitter Sustaining Voltage

I_C=2A, I_B=0.2A

V_CE=5V, I_C=10mA

V_CE=1V, I_C=2A

0.8 V

0.58

1.5 V

I_C=100mA, I_B=0

V_CE=1V, I_C=250mA,

Current Gain-Bandwidth Product

MHz

* Pulse Test:PW=300μS,Duty Cycle=1.5% Pulsed

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