Datasheet > HSBD434

HSBD434

更新时间： 2024-09-28 05:36:59

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
1页	234K
描述
PNP SILICON TRANSISTOR

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中文翻译

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数据手册

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HSBD434 数据手册

PNP S I L I C O N T R A N S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

HSBD434

█ APPLICATIONS

Medium Power Linear switching Applications

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

T_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation（T_c=25℃）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 36W

V_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -22V

V_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -22V

V_CES— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -22V

V_EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -5V

I_C— — Collector Curren（t Pulse）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -7A

I_C— — Collector Current（DC）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -4A

I_B— — Base Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -1A

1―Emitter, E

2―Collector，C

3―Base，B

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Collector Cut-off Current

Emitter Cut-off Current

Collector Cut-off Current

Min

Typ

Max

Unit

Test Conditions

V_CB=-22V, I_E=0

ICBO

IEBO

ICES

-100 μA

-1 mA

V_EB=-5V, I_C=0

V_CE=-22V, V_EB=0

V_CE=-5V, I_C=-10mA

V_CE=-1V, I_C=-500mA

V_CE=-1V, I_C=-2A

I_C=-2A, I_B=-0.2A

V_CE=-1V, I_C=-2A

I_C=-100mA, I_B=0

V_CE=-1V, I_C=-250mA,

-100 μA

*HFE（1） DC Current Gain

40 140

85 140

*HFE（2） DC Current Gain

*HFE（3） DC Current Gain

*VCE(sat) Collector- Emitter Saturation Voltage

-0.2 -0.5 V

*VBE(on)

Base-Emitter On Voltage

VCEO(sus) Collector-Emitter Sustaining Voltage

ft Current Gain-Bandwidth Product

* Pulse Test:PW=300μS,Duty Cycle=1.5% Pulsed

-1.1 V

-22

MHz

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