Datasheet > HSBD375

HSBD375

更新时间： 2024-09-22 05:36:51

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
1页	235K
描述
NPN SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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HSBD375 数据手册

NPN S I L I C O N T R A N S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

HSBD375

█ APPLICATIONS

Medium Power Linear switching Applications

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

T_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation（T_c=25℃）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 25W

V_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 50V

V_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 45V

V_EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 5V

I_C— — Collector Curren（t Pulse）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 3A

I_C— — Collector Curren（t DC）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 2A

Ib— — Base Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 1A

1―Emitter, E

2―Collector，C

3―Base，B

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Collector Cut-off Current

Emitter Cut-off Current

Min

Typ

Max

Unit

Test Conditions

ICBO

IEBO

V_CB=45V, I_E=0

2 μA

100 μA

375

V_EB=5V, I_C=0

*HFE（1） DC Current Gain

V_CE=2V, I_C=150mA

V_CE=2V, I_C=1A

I_C=1A, I_B=0.1A

V_CE=2V, I_C=1A

I_C=100mA, I_B=0

*HFE（2） DC Current Gain

*VCE(sat) Collector- Emitter Saturation Voltage

*VBE(on)

Base-Emitter On Voltage

1.5 V

VCEO(sus) Collector-Emitter Sustaining Voltage

BVCBO

tON

Collector-Base Breakdown Voltage

Turn-On Time

I_C=100μA, I_E=0

V_CC=30V, I_C=0.5A

tOFF

Turn-Off Time

I_B1=-I_B2=0.05A

500

* Pulse Test:PW=350μS,Duty Cycle=2% Pulsed

█ h_FE(3)Classification

Cassification

h_FE(3)

40~100

63~160

100~250

150~375

中文翻译

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