Datasheet > HSB857J

HSB857J

更新时间： 2024-02-07 05:16:49

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
4页	46K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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技术参数
数据手册

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HSB857J 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	最大集电极电流 (IC)：	3 A
配置：	Single	最小直流电流增益 (hFE)：	170
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	20 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

HSB857J 数据手册

Spec. No. : HJ200101

Issued Date : 2001.09.01

Revised Date : 2005.07.14

Page No. : 1/4

HI-SINCERITY

MICROELECTRONICS CORP.

HSB857J

PNP EPITAXIAL PLANAR TRANSISTOR

Description

Low frequency power amplifier.

TO-252

Absolute Maximum Ratings (T_A=25°C)

• Maximum Temperatures

Storage Temperature ............................................................................................................................. -50~+150 °C

Junction Temperature ................................................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (T_C=25°C)..................................................................................................................... 20 W

• Maximum Voltages and Currents

BV_CBOCollector to Base Voltage......................................................................................................................... -60 V

BV_CEOCollector to Emitter Voltage..................................................................................................................... -50 V

BV_EBOEmitter to Base Voltage............................................................................................................................. -5 V

I_CCollector Current.............................................................................................................................................. -3 A

I_CCollector Current (I_CPeak)............................................................................................................................ -4.5 A

Electrical Characteristics (T_A=25°C)

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Min.

Typ.

Max.

Unit

Test Conditions

-60

I_C=-50uA

-50

I_C=-1mA

-5

I_E=-50uA

-1

-1.5

400

V_CB=-50V

I_CEO

V_CE=-40V

I_EBO

V_EB=-4V

*V_CE(sat)

*V_BE(sat)

*h_FE

-0.3

I_C=-2A, I_B=-0.2A

170

I_C=-500mA, V_CE=-3V

f_T

MHz

V_CE=-5V, I_C=-500mA, f=100MHz

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

HSB857J

HSMC Product Specification

12 3 4

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