Datasheet > HSB562

HSB562

更新时间： 2024-02-12 16:54:48

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
4页	43K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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技术参数
数据手册

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HSB562 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

HSB562 数据手册

Spec. No. : HE6513-B

Issued Date : 1993.01.15

Revised Date : 2000.10.01

Page No. : 1/4

HI-SINCERITY

MICROELECTRONICS CORP.

HSB562

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HSB562 is designed for general purpose low frequency power

amplifier applications.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature ................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ............................................................................... 900 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ....................................................................................... -25 V

VCEO Collector to Emitter Voltage .................................................................................... -20 V

VEBO Emitter to Base Voltage ............................................................................................ -5 V

IC Collector Current ............................................................................................................ -1 A

(Ta=25°C)

Characteristics

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IC=-10uA, IE=0

IC=-1mA, IB=0

IE=-10uA, IC=0

VCB=-20V, IE=0

IC=-800mA, IB=-80mA

IC=-500mA, VCE=-2V

VCE=-2V, IC=-500mA

VCB=-10V, f=1MHz

BVCBO

BVCEO

BVEBO

ICBO

*VCE(sat)

VBE(on)

*hFE

-25

-20

-5

-1

-500

-1

240

Cob

350

MHz

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

Classification Of hFE

Rank

Range

85-170

120-240

HSMC Product Specification

12 3 4

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