Spec. No. : HJ200301
Issued Date : 2001.11.30
Revised Date : 2005.07.14
Page No. : 1/4
HI-SINCERITY
MICROELECTRONICS CORP.
HSB1386J
LOW FREQUENCY TRANSISTOR (-20V, -4A)
Features
• Low VCE(sat)
.
VCE(sat)=-0.55V(Typ.) (IC/IB=-4A/-0.1A)
• Excellent DC current gain characteristics.
TO-252
Structure
Epitaxial planar type PNP silicon transistor
Absolute Maximum Ratings (TA=25°C)
Symbol
VCBO
Parameter
Limits
-30
-20
-6
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
VCEO
V
VEBO
V
-4
A
A(Pulse)*
W
IC
Collector Current
-10
20
PD
Tj
Collector Power Dissipation (TC=25oC)
Junction Temperature
150
oC
Tstg
Storage Temperature
-55~+150
oC
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Parameter
Min. Typ. Max. Unit
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter B reakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
-30
-20
-6
-
-
-
-
-
V
V
IC=-50uA
IC=-1mA
IC=-50uA
-
-
-0.5
-0.5
-1
uA VCB=-20V
uA VEB=-5V
IEBO
Emitter Cutoff Current
-
*VCE(sat)
*hFE
fT
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
-
-
V
IC/IB=-4A/-0.1A
VCE=-2V, IC=-0.5A
82
-
-
580
-
110
30
MHz VCE=-6V, IE=50mA, f=30MHz
pF VCB=-20V, IE=0A, f=1MHz
Cob
Output Capacitance
-
-
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE
Rank
P
Q
R
E
Range
82-180
120-270
180-390
370-580
HSB1386J
HSMC Product Specification