Datasheet > HSB1109SC

HSB1109SC

更新时间： 2023-02-26 14:54:41

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	112K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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HSB1109SC 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

HSB1109SC 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

TO – 92

HSB1109S TRANSISTOR (PNP)

1.EMITTER

2.COLLECTOR

3.BASE

FEATURES

Complementary Pair with HSD1609S.

APPLICATIONS

Low Frequency and High Voltage Amplifier

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-160

-5

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-0.1

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

625

℃/W

℃

R_θJA

T_j

200

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

-160

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= -0.01mA,I_E=0

I_C=-1mA,I_B=0

I_E=-10μA,I_C=0

V_CB=-140V,I_E=0

-10

320

μA

Emitter cut-off current

I_EBO

V_EB=-5V,I_C=0

h_FE(1)

V_CE=-5V, I_C=-10mA

V_CE=-5V, I_C=-1mA

I_C=-30mA,I_B=-3mA

V_CE=-5V, I_C=-10mA

V_CB=-10V,I_E=0, f=1MHz

VCE=-5V,IC=-10mA, f=100MHz

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

-2

-1.5

V_BE

5.5

Collector output capacitance

Transition frequency

C_ob

f_T

140

MHz

*Pulse test

CLASSIFICATION OF h_FE(1)

RANK

RANGE

60-120

100-200

160-320

A,Dec,2010

中文翻译

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