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HSB1109S PDF预览

HSB1109S

更新时间: 2024-09-25 22:33:39
品牌 Logo 应用领域
HSMC 晶体晶体管局域网
页数 文件大小 规格书
4页 40K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

HSB1109S 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:NBase Number Matches:1

HSB1109S 数据手册

 浏览型号HSB1109S的Datasheet PDF文件第2页浏览型号HSB1109S的Datasheet PDF文件第3页浏览型号HSB1109S的Datasheet PDF文件第4页 
Spec. No. : HE6514  
Issued Date : 1993.03.15  
Revised Date : 2002.02.06  
Page No. : 1/4  
HI-SINCERITY  
MICROELECTRONICS CORP.  
HSB1109S  
PNP EPITAXIAL PLANAR TRANSISTOR  
Description  
The HSB1109S is designed for low frequency and high voltage  
amplifier applications complementary pair with HSD1609S.  
TO-92  
Absolute Maximum Ratings  
Maximum Temperatures  
Storage Temperature............................................................................................ -50 ~ +150 °C  
Junction Temperature.................................................................................... +150 °C Maximum  
Maximum Power Dissipation  
Total Power Dissipation (Ta=25°C)................................................................................ 900 mW  
Maximum Voltages and Currents (Ta=25°C)  
VCBO Collector to Base Voltage ...................................................................................... -160 V  
VCEO Collector to Emitter Voltage................................................................................... -160 V  
VEBO Emitter to Base Voltage............................................................................................. -5 V  
IC Collector Current ...................................................................................................... -100 mA  
Characteristics (Ta=25°C)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
IC=-10uA, IE=0  
IC=-1mA. IB=0  
IE=-10uA, IC=0  
VCB=-140V, IE=0  
IC=-30mA, IB=-3mA  
VCE=-5V, IC=-10mA  
VCE=-5V, IC=-10mA  
VCE=-5V, IC=-1mA  
VCE=-5V, IC=-10mA, f=100MHz  
VCB=-10V, IE=0, f=1MHz  
BVCBO  
BVCEO  
BVEBO  
ICBO  
*VCE(sat)  
VBE(on)  
*hFE1  
*hFE2  
fT  
-160  
-160  
-5  
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
uA  
V
V
-10  
-2  
-1.5  
320  
-
-
60  
30  
-
-
140  
5.5  
-
-
MHz  
pF  
Cob  
-
*Pulse Test : Pulse Width 380us, Duty Cycle2%  
Classification Of hFE1  
Rank  
B
C
D
Range  
60-120  
100-200  
160-320  
HSB1109S  
HSMC Product Specification  

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