Datasheet > HSA733SP

HSA733SP

更新时间： 2024-01-26 08:52:07

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
3页	28K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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技术参数
数据手册

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HSA733SP 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	0.1 A	配置：	Single
最小直流电流增益 (hFE)：	90	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.25 W
子类别：	Other Transistors	表面贴装：	NO
标称过渡频率 (fT)：	100 MHz	Base Number Matches：	1

HSA733SP 数据手册

Spec. No. :HSP200204

Issued Date : 1998.01.06

Revised Date : 2002.03.26

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HSA733SP

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HSA733 is designed for use in driver stage of AF amplifier.

Features

• High hFE and Excellent Linearity: 200 Typ. hFE(VCE=6.0,IC=1.0mA)

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ........................................................................................... -55 ~ +150 °C

Junction Temperature.................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage........................................................................................ -60 V

VCEO Collector to Emitter Voltage..................................................................................... -50 V

VEBO Emitter to Base Voltage............................................................................................. -5 V

IC Collector Current....................................................................................................... -100 mA

IB Base Current............................................................................................................... -20 mA

Characteristics (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IC=-100uA

IC=-1mA

IE=-10uA

VCB=-60V, IC=0

VEB=-5V, IC=0

IC=-100mA, IB=-10mA

IC=-1mA, VCE=-6V

VCE=-6V, IC=-1mA

IC=-1mA, VCE=-6V

IE=0, VCB=-10V, f=1MHz

BVCBO

BVCEO

BVEBO

ICBO

-60

-50

-5

-0.55

100

-0.1

-0.3

-0.7

600

IEBO

*VCE(sat)

VBE(on)

*hFE

-0.18

-0.62

200

180

4.5

Cob

MHz

6.0

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

Classification Of hFE1

Rank

Range

90-180

135-270

200-400

300-600

HSA733SP

HSMC Product Specification

12 3

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