Spec. No. : HE6507
Issued Date : 1992.12.16
Revised Date : 2002.03.26
Page No. : 1/4
HI-SINCERITY
MICROELECTRONICS CORP.
HSA733
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSA733 is designed for use in driver stage of AF amplifier
applications.
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 250 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage........................................................................................ -60 V
VCEO Collector to Emitter Voltage..................................................................................... -50 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current ...................................................................................................... -100 mA
IB Base Current .............................................................................................................. -20 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-60V, IE=0
BVCBO
BVCEO
BVEBO
ICBO
-60
-50
-5
-
-
-
-0.55
90
100
-
-
-
-
-
-
-
-
-
V
V
V
uA
uA
V
-0.1
-0.1
-0.3
-0.7
600
-
IEBO
VEB=-5V, IC=0
*VCE(sat)
VBE(on)
*hFE
-0.18
-0.62
200
180
4.5
IC=-100mA, IB=-10mA
VCE=-6V, IC=-1mA
VCE=-6V, IC=-1mA
VCE=-6V, IC=-10mA
VCB=-10V, f=1MHz, IE=0
V
fT
Cob
MHz
pF
6
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank
R
Q
P
K
Range
90-180
135-270
200-400
300-600
HSA733
HSMC Product Specification