Datasheet > HS882

HS882

更新时间： 2024-11-06 05:36:47

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
1页	77K
描述
NPN SILICON TRANSISTOR

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中文翻译

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数据手册

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HS882 数据手册

NPN S I LI C O N TRAN S I STO R

Shantou Huashan Electronic Devices Co.,Ltd.

HS882

█ APPLI CATI ONS

Audio Frequency Power Amplifier , Switching Power Amplifier.

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

TO-126

T_stg——Storage Temperature

- 55~150℃

150℃

10W

T_j——Junction Temperature

P_C——Collector Dissipation（T_c=25℃）

P_C——Collector Dissipation（T_A=25℃）

V_CBO——Collector-Base Voltage

V_CEO——Collector-Emitter Voltage

V_EBO——Emitter-Base Voltage

40V

1―Emitter，E

2―Collector，C

3―Base，B

30V

I_C——Collector Current（DC）

Ib——Base Current （DC）

0.6A

█ Electrical Characteristics（T_a=25℃）

Symbol

I_CBO

Parameter

Min

Typ

Max

Unit

Test Conditions

V_CB=30V, I_E=0

V =5V, I _C=0

μA

Collector-Base Cutoff Current

Emitter- Base Cutoff Current

DC Current Gain

I_EBO

h_FE

μA

V =2V, I _C=1A

400

0. 5

2. 0

V_CE

I _C=2A, I _B=0. 2A

（

）

sat

Collector- Emitter Saturation Voltage

Base -Emitter Saturation Voltage

Output Capacitance

0. 3

1. 0

I _C=2A, I _B=0. 2A

VBE（sat）

C_ob

VCB=10V，I E=0，f =1MHz

VCE=5V，I E=0. 1A

Current Gain-Bandwidth Product

f_T

MHz

█ hFE Classification

60—120

100—200

160—320

200—400

中文翻译

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