Datasheet > HS733

HS733

更新时间： 2024-09-16 05:36:47

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
2页	243K
描述
PNP SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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HS733 数据手册

PNP S I L I C O N T R A N S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

HS733

█ APPLICATIONS

The H733 is designed for driver stage of AF amplifier

And low speed switching.

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

TO-92

T_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 250mW

V_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -60V

V_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -50V

V_EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -5V

I_C— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -150mA

1―Emitter，E

2―Base，B

3― Collector，C

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min

Typ

Max

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

HFE

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

-60

-50

-5

I_C=-100μA, I =0

I_C=-10mA, I =0

I_E=-10μA，I_C=0

V_CE=-6V, I_C=-1mA

I_C=-100mA, I_B=-10mA

V_CE=-6V, I_C=-1mA

V_CB=-60V, I_E=0

700

VCE(sat)

VBE(ON)

ICBO

Collector- Emitter Saturation Voltage

Base-Emitter On Voltage

Collector Cut-off Current

-0.3 V

-0.8 V

-100 nA

-0.5

IEBO

Emitter Cut-off Current

V_EB=-5V, I_C=0

Current Gain-Bandwidth Product

Output Capacitance

50 180

2.8

MHz V_CE=-6V, I_C=-10mA

pF V_CB=-6V, I_E=0，f=1MHz

VCE=-6V,IC=-0.3mA，

Cob

Noise Figure

6.0 20 dB

f=100Hz，Rs=10Ω

█ hFE Classification

350— 700

70— 140

120— 240

200— 400

中文翻译

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