是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-92 |
包装说明: | CYLINDRICAL, O-PBCY-W3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.84 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (Abs) (ID): | 0.2 A | 最大漏极电流 (ID): | 0.2 A |
最大漏源导通电阻: | 15 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | O-PBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.9 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HS56104000J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block | |
HS56105000J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block | |
HS56109000J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block | |
HS56109100J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block | |
HS56300100J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block | |
HS56302000J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block | |
HS56302100J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block | |
HS56303000J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block | |
HS56306100J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block | |
HS56309100J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block |