Datasheet > HS2D

HS2D

更新时间： 2024-11-09 14:49:03

品牌	Logo	应用领域
森美特 - SUNMATE		功效光电二极管
页数	文件大小	规格书
2页	719K
描述
Rectifier device High efficiency recovery rectifier (Trr 50... 75ns)

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HS2D 数据手册

HS2A - HS2M

HIGH EFFICIENT SURFACE MOUNT RECTIFIERS

VOLTAGE RANGE: 50V-1000 V

CURRENT: 1.5A

Features

Glass passivated junction chip.

For surface mounted application

Low forward voltage drop

Low profile package

Built-in stain relief, ideal for automatic placement

Fast switching for high efficiency

High temperature soldering:

250^oC/10 seconds at terminals

Plastic material used carries Underwriters Laboratory

Classification 94V-O

SMB(DO-214AA)

Dim

Min

3.30

4.06

1.91

0.15

5.00

0.10

0.76

2.00

Max

3.94

4.70

2.21

0.31

5.59

0.20

1.52

2.62

Mechanical Data

Case: SMB/DO-214AA, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.093 grams (approx.)

All Dimensions in mm

T_A= 25ꢀC unless otherwise specified

Maximum Ratings and Electrical Characteristics

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Parameter

Symbols

HS2A

HS2B

HS2D

HS2F

HS2G

HS2J

HS2K

HS2M

Units

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

200

140

200

300

210

300

400

280

400

600

420

600

800

560

800

1000

700

Volts

Maximum DC blocking voltage

100

1000

Maximum average forward rectified current

See Fig.2

1.5

Amps

(AV)

Peak forward surge current, 8.3ms single

half sine-wave superimposed on rated load

(JEDEC Method)

I_FSM

50.0

Amps

Volts

Maximum instantaneous forward voltage @ 1.5A

V_F

I_R

1.0

1.3

1.7

Maximum DC reverse current

at rated DC blocking voltage

@ T_A=25^oC

5.0

100

@ T_A=100^oC

^oC

Maximum reverse recovery time (Note 1)

Typical junction capacitance (Note 2)

Operating junction temperature range

Storage temperature range

t_rr

C_J

T_J

-55 to +150

T_STG

Notes:

1. Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A

2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.

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