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HS1-6617RH-8

更新时间： 2024-09-25 22:23:15
品牌 Logo 应用领域
英特矽尔 - INTERSIL 可编程只读存储器
页数 文件大小 规格书
14页 131K
描述
Radiation Hardened 2K x 8 CMOS PROM

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HS1-6617RH-8 数据手册

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HS-6617RH  
Radiation Hardened  
2K x 8 CMOS PROM  
August 1995  
Features  
Pinouts  
• Total Dose 1 x 105 RAD (Si)  
• Latch-Up Free >1 x 1012 RAD (Si)/s  
• Field Programmable  
24 LEAD CERAMIC DUAL-IN-LINE  
METAL SEAL PACKAGE (SBDIP)  
MIL-STD-1835 CDIP2-T24  
TOP VIEW  
• Functionally Equivalent to HM-6617  
• Pin Compatible with Intel 2716  
• Low Standby Power 1.1mW Max  
• Low Operating Power 137.5mW/MHz Max  
• Fast Access Time 100ns Max  
• TTL Compatible Inputs/Outputs  
• Synchronous Operation  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
Q0  
1
2
3
4
5
6
7
8
9
24  
VDD  
23 A8  
22 A9  
21  
20  
P
G
19 A10  
18  
• On Chip Address Latches  
E
• Three-State Outputs  
17 Q7  
16 Q6  
15 Q5  
14 Q4  
13 Q3  
• Nicrome Fuse Links  
• Easy Microprocessor Interfacing  
• Military Temperature Range -55oC to +125oC  
Q1 10  
Q2 11  
Description  
GND 12  
The Intersil HS-6617RH is a radiation hardened 16K CMOS PROM,  
organized in a 2K word by 8-bit format. The chip is manufactured  
using a radiation hardened CMOS process, and is designed to be  
functionally equivalent to the HM-6617. Synchronous circuit design  
techniques combine with CMOS processing to give this device high  
speed performance with very low power dissipation.  
24 LEAD CERAMIC METAL SEAL FLATPACK  
PACKAGE (FLATPACK)  
MIL-STD-1835 CDFP4-F24  
TOP VIEW  
On chip address latches are provided, allowing easy interfacing with  
recent generation microprocessors that use multiplexed address/data  
bus structure, such as the HS-80C85RH or HS-80C86RH. The output  
enable control (G) simplifies microprocessor system interfacing by  
allowing output data bus control, in addition to, the chip enable  
control. Synchronous operation of the HS-6617RH is ideal for high  
speed pipe-lined architecture systems and also in synchronous logic  
replacement functions.  
1
24  
VDD  
A8  
A9  
P
A7  
A6  
2
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
A5  
3
A4  
4
G
A3  
5
A10  
E
A2  
6
A1  
7
Q7  
Q6  
Q5  
Q4  
Q3  
A0  
8
Q0  
Q1  
Q2  
GND  
9
Applications for the HS-6617RH CMOS PROM include low power  
microprocessor based instrumentation and communications systems,  
remote data acquisition and processing systems, processor control  
store, and synchronous logic replacement.  
10  
11  
12  
Ordering Information  
PART NUMBER  
HS1-6617RH-Q  
TEMPERATURE RANGE  
PACKAGE  
24 Lead SBDIP  
24 Lead SBDIP  
24 Lead SBDIP  
24 Lead SBDIP  
24 Lead Flatpack  
24 Lead Flatpack  
24 Lead Flatpack  
24 Lead Flatpack  
PIN  
A
DESCRIPTION  
o
o
-55 C to +125 C  
Address Input  
Data Output  
Chip Enable  
Output Enable  
o
o
HS1-6617RH-8  
-55 C to +125 C  
Q
o
HS1-6617RH/SAMPLE  
HS1-6617RH/PROTO  
HS9-6617RH-Q  
25 C  
E
o
o
-55 C to +125 C  
G
o
o
-55 C to +125 C  
P
Program Enable (P Hardwired to  
VDD, except during programming)  
o
o
HS9-6617RH-8  
-55 C to +125 C  
o
HS9-6617RH/Sample  
HS9-6617RH/PROTO  
25 C  
o
o
-55 C to +125 C  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
Spec Number 518742  
File Number 3033.3  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
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