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HS1-303BRH/PROTO PDF预览

HS1-303BRH/PROTO

更新时间： 2024-01-24 05:10:06
品牌 Logo 应用领域
英特矽尔 - INTERSIL 开关光电二极管
页数 文件大小 规格书
3页 88K
描述
Radiation Hardened CMOS Dual SPDT Analog Switch

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HS1-303BRH/PROTO 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：DIP包装说明：DIP, DIP14,.3
针数：14Reach Compliance Code：not_compliant
HTS代码：8542.39.00.01风险等级：5.91
Is Samacsys：N模拟集成电路 - 其他类型：SPDT
JESD-30 代码：R-CDIP-T14JESD-609代码：e0
标称负供电电压 (Vsup)：-15 V信道数量：1
功能数量：2端子数量：14
标称断态隔离度：40 dB最大通态电阻 (Ron)：75 Ω
最高工作温度：125 °C最低工作温度：-55 °C
输出：SEPARATE OUTPUT封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装代码：DIP封装等效代码：DIP14,.3
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：NOT SPECIFIED电源：+-15 V
认证状态：Not Qualified筛选级别：MIL-PRF-38535 Class T
座面最大高度：5.08 mm子类别：Multiplexer or Switches
标称供电电压 (Vsup)：15 V表面贴装：NO
最长断开时间：450 ns最长接通时间：500 ns
切换：BREAK-BEFORE-MAKE技术：CMOS
温度等级：MILITARY端子面层：Tin/Lead (Sn/Pb)
端子形式：THROUGH-HOLE端子节距：2.54 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
总剂量：100k Rad(Si) V宽度：7.62 mm
Base Number Matches：1

HS1-303BRH/PROTO 数据手册

 浏览型号HS1-303BRH/PROTO的Datasheet PDF文件第2页浏览型号HS1-303BRH/PROTO的Datasheet PDF文件第3页 
HS-303ARH, HS-303BRH  
®
Data Sheet  
July 7, 2008  
FN6411.1  
Radiation Hardened  
Features  
CMOS Dual SPDT Analog Switch  
• QML, Per MIL-PRF-38535  
The HS-303ARH and HS-303BRH analog switches are  
monolithic devices fabricated using Intersil’s dielectrically  
isolated Radiation Hardened Silicon Gate (RSG) process  
technology to insure latch-up free operation. They are pinout  
compatible and functionally equivalent to the HS-303RH, but  
offer improved 300kRAD(Si) total dose capability. These  
switches offers low-resistance switching performance for  
analog voltages up to the supply rails. “ON” resistance is low  
and stays reasonably constant over the full range of  
operating voltage and current. “ON” resistance also stays  
reasonably constant when exposed to radiation.  
• Radiation Performance  
5
- Total Dose: 3x10 RAD(Si)  
2
- SEE: For LET = 60MeV-mg/cm at 60° Incident Angle,  
<150pC Charge Transferred to the Output of an Off  
Switch  
• No Latch-Up, Dielectrically Isolated Device Islands  
• Pinout and Functionally Compatible with Intersil  
HS-303RH and HI-303 Series Analog Switches  
• Analog Signal Range Equal to the Supply Voltage Range  
• Low Leakage . . . . . . . . . . . . . . . . 100nA (Max, Post-Rad)  
Break-before-make switching is controlled by 5V digital  
inputs. The HS-303ARH should be operated with nominal  
±15V supplies, while the HS-303BRH should be operated  
with nominal ±12V supplies.  
• Low r  
ON  
. . . . . . . . . . . . . . . . . . . . . . 70Ω (Max, Post-Rad)  
• Low Standby Supply Current . . . . . . . . . . +150µA/-100µA  
(Max, Post-Rad)  
Specifications  
Pinouts  
Specifications for Rad Hard QML devices are controlled by  
the Defense Supply Center in Columbus (DSCC). The SMD  
numbers listed below must be used when ordering.  
HS1-303ARH, HS-303BRH (SBDIP), CDIP2-T14  
TOP VIEW  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
V+  
S4  
D4  
D2  
S2  
IN2  
V-  
NC  
S3  
Detailed Electrical Specifications for the HS-303ARH and  
HS-303BRH are contained in SMD 5962-95813. A “hot-link”  
is provided from our website for downloading  
D3  
D1  
S1  
IN1  
GND  
8
HS9-303ARH, HS-303BRH (FLATPACK) CDFP3-F14  
TOP VIEW  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
V+  
S4  
D4  
D2  
S2  
IN2  
V-  
NC  
S3  
D3  
D1  
S1  
IN1  
GND  
8
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.  
Copyright Intersil Americas Inc. 2006, 2008. All Rights Reserved  
All other trademarks mentioned are the property of their respective owners.  
123

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