Beam Lead PIN Diodes for
Phased Arrays and Switches
Technical Data
HPND-4018
HPND-4028
HPND-4038
690 (27)
650 (26)
Features
• Low Capacitance
0.025 pF Maximum at 1 MHz
330 (13)
260 (10)
Guaranteed Min./Max.
220 (9)
180 (7)
180 (7)
160 (6)
• Fast Switching
2.0nsec
• Low Resistance at Low Bias
1.5 Ω at IF = 10 mA (Typical)
110 (4.5)
90 (3.5)
280 (11)
240 (9)
• Rugged Construction
Typical 10 Gram Lead Pull
• Silicon Nitride Passivation
12 (0.47)
8 (0.32)
Description
TheHPND-4018,4028,and4038
beam lead PIN diodes are
designed for low capacitance, low
resistance, and fast switching at
60 (2.4)
40 (1.6)
DIMENSIONS IN µM (1/1000 INCH)
microwave frequencies. These
characteristics are achieved at
low bias levels for minimal power
consumption. Advanced process-
ing techniques ensure uniform
and consistent electrical perfor-
mance, allowing guaranteed
capacitance windows. This
translates to improved perfor-
mance in phased array
Outline 83
Maximum Ratings
Operating Temperature ................................................ -65°Cto+150°C
Storage Temperature .................................................... -65°Cto+200°C
Power Dissipation at T
= 25°C ........................................... 250mW
CASE
(Deratelinearlytozeroat150°C.)
Minimum Lead Strength............................... 4 grams pull on either lead
perMIL-S-19500,LTPD=20
applications.
Applications
array radar. The low capacitance
makes them ideal for circuits
requiring high isolation in the
series configuration. These
devices have been fully charac-
terized and S-parameters have
been provided.
These beam lead PIN diodes are
designed for use in stripline,
coplanar waveguide, or micro-
strip circuits. Applications
include phase shifting and
switching. The guaranteed
capacitance windows ensure
uniform performance in phased
Rugged construction and strong
beams ensure high assembly
yields while nitride passivation
and polyimide coating ensure
reliability. Standard Hi-Rel
programs are available for all
three devices.
2-86
5965-8878E