Datasheet > HPA100R2

HPA100R2

更新时间： 2022-01-19 03:53:00

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页数	文件大小	规格书
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描述
TRANSISTOR \| BJT \| NPN \| 800V V(BR)CEO \| 10A I(C) \| TO-247VAR

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HPA100R2 数据手册

Ordering number:ENN2826

NPN Triple Diffused Planar Silicon Composite Transistor

HPA100R

Ultrahigh-Definition CRT Display

Horizontal Deflection Output Applications

Features

Package Dimensions

unit:mm

· High speed (t typ=100ns).

· High breakdown voltage (V

· High-speed damper diode placed in one package

(t =0.2µs max).

=1500V).

CBO

2048B

[HPA100R]

20.0

3.3

5.0

· Adoption of MBIT process.

· High reliability (adoption of HVP process).

2.0

3.4

0.6

1.2

1 : Base

2 : Collector

3 : Emitter

5.45

SANYO : TO3PBL

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Symbol

Conditions

Ratings

Unit

1500

800

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

EBO

Collector Current (Pulse)

Diode Forward Current

Diode Forward Current (Pulse)

Total Power Dissipation

Junction Temperature

Storage Temperature

PW≤100µs, duty≤50%

Tc=25°C

150

˚C

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Collector Cutoff Current

=1500V, I =0

CBO

Collector Sustain Voltage

=100mA, I =0

800

CEO(sus)

Emitter Cutoff Current

=4V, I =0

1.0

EBO

Collector-to-Emitter Saturation Voltage

=6A, I =1.5A

CE(sat)

BE(sat)

Base-to-Emitter Saturation Voltage

=6A, I =1.5A

1.5

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

82599TH (KT)/8268MO, TS No.2826–1/4

12 3 4

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