Datasheet > HP8M51

HP8M51

更新时间： 2024-09-27 11:14:47

品牌	Logo	应用领域
罗姆 - ROHM		开关
页数	文件大小	规格书
24页	2456K
描述
HP8M51TB1采用小型大功率封装(HSOP8)，是非常适用于低导通电阻的开关应用的MOSFET。

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中文翻译

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HP8M51 数据手册

HP8M51

ꢀꢀ100V Nch+Pch Power MOSFET

Datasheet

ꢀꢀ

llOutline

ꢀ

Tr1:Nch Tr2:Pch

100V -100V

170mΩ 290mΩ

±4.5A ±4.5A

7.0W

Symbol

V_DSS

R_DS(on)(Max.)

HSOP8

ꢀ

I_D

P_D

ꢀ

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

llFeatures

1) Low on - resistance

llInner circuit

2) Small Surface Mount Package (HSOP8)

3) Pb-free lead plating ; RoHS compliant

4) Halogen Free

llPackaging specifications

Embossed

Tape

Packing

llApplication

Reel size (mm)

330

Switching

Tape width (mm)

Quantity (pcs)

Taping code

Marking

Type

2500

TB1

HP8M51

llAbsolute maximum ratings (T = 25°C ,unless otherwise specified)

Value

Tr1:Nch Tr2:Pch

Parameter

Drain - Source voltage

Symbol

Unit

V_DSS

100

±4.5

±18

±20

4.5

-100

±4.5

±18

±20

-4.5

14.7

I_D

Continuous drain current

Pulsed drain current

I_DP

V_GSS

Gate - Source voltage

I_AS

Avalanche current, single pulse

Avalanche energy, single pulse

E_AS

2.9

P_D

7.0

3.0

Power dissipation

total

P_D

T_j

Junction temperature

150

℃

T_stg

Operating junction and storage temperature range

-55 to +150

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www.rohm.com

ꢀ ꢀ

1/19

20190527 - Rev.003

12 3 4 5 6 7...24

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