Datasheet > HP32CF

HP32CF

更新时间： 2024-02-22 07:04:13

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
2页	132K
描述
PNP SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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HP32CF 数据手册

PNP S I LI C O N TRAN S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

HP32CF

█ APPLICATIONS

Mediuｍ Power Linear switching Applications.

TO-220F

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

T_stg——Storage Temperature………………………… -55~150℃

T_j——Junction Temperature…………………………………150℃

P_C——Collector Dissipation（Tc=25℃）……………………………30W

P_C——Collector Dissipation（Ta=25℃）……………………………2W

V_CBO——Collector-Base Voltage………………………………-100V

V_CEO——Collector-Emitter Voltage……………………………-100V

V_EBO——Emitter-Base Voltage………………………………-5V

I_C——Collector Curren（t DC）………………………………………-3A

I_C——Collector Current（Pulse）……………………………………-5A

Ib——Base Current………………………………………………-1A

1―Base，B

2―Collector，C

3―Emitter，E

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min Typ Max Unit

Test Conditions

I_C=-30mA, I_B=0

BVCEO

Collector-Emitter Breakdown Voltage -100

HFE（1^）*DC Current Gain

HFE（2^）*DC Current Gain

VCE(sat) *Collector- Emitter Saturation Voltage

VBE(ON) *Base-Emitter On Voltage

V_CE=-4V, I_C=-1A

V_CE=-4V, I_C=-3A

I_C=-3A, I_B=-375mA

V_CE=-4V, I_C=-3A

-1.2 V

-1.8 V

ICEO

ICES

IEBO

Collector Cut-off Current

Emitter Cut-off Current

-0.3 mA V_CB=-60V, I_B=0

-200 μA V_CE=-100V, V_EB=0

-1 mA V_EB=-5V, I_C=0

Current Gain-Bandwidth Product

3.0

MHz V_CE=-10V, I_C=-0.5A，f=1MHz

*Pulse Test：PW≤300μs，Duty cycle≤2%

中文翻译

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