Datasheet > HN1C07F

HN1C07F

更新时间： 2024-06-27 12:12:21

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
1页	53K
描述
Dual NPN Transistor

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中文翻译

获取价格

数据手册

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HN1C07F 数据手册

SMD Type

TransistIoCrs

NPN Silicon Epitaxial Transistor

HN1C07F

Unit: mm

Features

Excellent Current Gain(h^FE)linearity

:h^FE=25(min) at V^CE=6V,I^C=400mA

1 pin mark

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

500

Base current

I^B

power dissipation

P^D

300

Junction temperature

Storage temperature

T^j

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

Symbol

I^CBO

I^EBO

Testconditons

V^CB= 50V, I^E=0

Min

Typ

Max

0.1

Unit

V^EB= 5V, I^C= 0

0.1

V^CE= 1V , I^C= 100mA

V^CE= 6V , I^C= 400mA

240

DC current gain *

h^FE

Collector-emitter saturation voltage *

Base emitter voltage *

V^CE(sat)I^C= 100mA, I^B= 10mA

0.1

0.8

0.25

1.0

V^BE

C^ob

f^T

V^CE= 1V, I^C= 100mA

V^CE= 6V, I^E= 0, f = 1MHz

V^CE= 6V, I^E= 20mA

Output capacitance

Transition frequency

300

MHz

*. PW 350ìs,duty cycle 2%

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中文翻译

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