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HN1A01FE PDF预览

HN1A01FE

更新时间： 2024-09-30 03:42:19
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体放大器小信号双极晶体管光电二极管PC
页数 文件大小 规格书
3页 193K
描述
Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications

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中文翻译

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HN1A01FE 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F6针数：6
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.43
Is Samacsys：N最大集电极电流 (IC)：0.15 A
集电极-发射极最大电压：50 V配置：SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)：120JESD-30 代码：R-PDSO-F6
元件数量：2端子数量：6
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
认证状态：Not Qualified表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：80 MHz
Base Number Matches：1

HN1A01FE 数据手册

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HN1A01FE  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
HN1A01FE  
Audio Frequency General Purpose Amplifier Applications  
Unit: mm  
z Small package (Dual type)  
z High voltage and high current  
: VCEO = −50V, IC = −150mA (max)  
z High hFE: hFE = 120~400  
z Excellent hFE linearity  
: hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 Common)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
−50  
−50  
V
V
CBO  
CEO  
EBO  
−5  
V
I
−150  
−30  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P *  
100  
C
JEDEC  
―
―
T
j
150  
JEITA  
T
−55~150  
stg  
TOSHIBA  
Weight: 3.0mg(typ.)  
2-2N1A  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*Total rating  
Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= −50V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
I
―
V
V
V
―
―
―
―
−0.1  
−0.1  
400  
−0.3  
―
μA  
μA  
CBO  
CB  
EB  
CE  
E
I
―
= −5V, I = 0  
C
EBO  
DC current gain  
h
―
= −6V, I = −2mA  
120  
―
―
FE (Note)  
C
Collector-emitter saturation voltage  
Transition frequency  
V
―
I
= −100mA, I = −10mA  
−0.1  
―
V
CE (sat)  
C
B
f
―
V
V
= −10V, I = −1mA  
80  
―
MHz  
pF  
T
CE  
CB  
C
Collector output capacitance  
C
―
= −10V, I = 0, f = 1MHz  
4
―
ob  
E
Note: hFE Classification Y (Y): 120~240, GR (G): 200~400 ( ) Marking Symbol  
Marking  
Equivalent Circuit (Top View)  
1
2007-11-01  
123

中文翻译

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HN1A01F-GR TOSHIBA

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