HMS17N65D, HMS17N65, HMS17N65F
N-Channel Super Junction Power MOSFET Ⅱ
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
VDS
650
210
17
V
RDS(ON) MAX
mΩ
A
ID
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
Application
● Power factor correction(PFC)
● Switched mode power supplies(SMPS)
Schematic diagram
● Uninterruptible Power Supply(UPS)
Package Marking And Ordering Information
Device
Device Package
Marking
HMS17N65D
HMS17N65
HMS17N65F
TO-263
HMS17N65D
HMS17N65
HMS17N65F
TO-220
TO-220F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25
℃
)
HMS17N65D
HMS17N65
Parameter
Symbol
HMS17N65F
Unit
650
V
V
Drain-Source Voltage (VGS=0V)
Gate-Source Voltage (VDS=0V)
V
DS
GS
±30
V
Continuous Drain Current at Tc=25°C
17
12
17*
12*
A
ID (DC)
ID (DC)
IDM (pluse)
PD
Continuous Drain Current at Tc=100°C
A
(Note 1)
51
51*
A
Pulsed drain current
145
1.16
33.5
0.268
W
Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
W/°C
mJ
A
(Note 2)
370
7.5
EAS
Single pulse avalanche energy
Avalanche current(Note 1)
IAR
Repetitive Avalanche energy ,tAR limited by Tjmax
(Note 1)
0.8
EAR
mJ
Shenzhen H&M Semiconductor Co.Ltd
http.//www.hmsemi.com
v1.0