Datasheet > HMPSA64

HMPSA64

更新时间： 2024-02-24 22:38:19

品牌	Logo	应用领域
HSMC		晶体晶体管
页数	文件大小	规格书
4页	41K
描述
PNP SILICON TRANSISTOR

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数据手册

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HMPSA64 数据手册

Spec. No. : HE6333-B

Issued Date : 1992.11.18

Revised Date : 2000.10.01

Page No. : 1/4

HI-SINCERITY

MICROELECTRONICS CORP.

HMPSA64

PNP SILICON TRANSISTOR

Description

The HMPSA64 is designed for application requiring extremely high

current gain at collector currents to 500mA.

Features

• High D.C Current Gain

• For Complementary Use with NPN Type HMPSA14

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature ................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ....................................................................................... -30 V

VCEO Collector to Emitter Voltage .................................................................................... -30 V

VEBO Emitter to Base Voltage .......................................................................................... -10 V

IC Collector Current...................................................................................................... -500 mA

(Ta=25°C)

Characteristics

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IC=-100uA, IE=0

IC=-100uA, IB=0

IE=-10uA, IC=0

VCB=-30V, IE=0

BVCBO

BVCES

BVEBO

ICBO

-30

-10

-100

-1.5

-2

IEBO

VEB=-10V, IC=0

*VCE(sat)

VBE(on)

*hFE1

*hFE2

IC=-100mA, IB=-0.1mA

IC=-100mA, VCE=-5V

IC=-10mA, VCE=-5V

IC=-100mA, VCE=-5V

IC=-100mA, VCE=-5V, f=100MHZ

125

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HSMC Product Specification

12 3 4

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