Spec. No. : HE6333
Issued Date : 1992.11.18
Revised Date : 2001.05.01
Page No. : 1/3
HI-SINCERITY
MICROELECTRONICS CORP.
HMPSA42
NPN EPITACIAL PLANAR TRANSISTOR
Description
The HMPSA42 is high voltage transistor.
Features
• High Collector-Emitter Breakdown Voltage
• Low Collector-Emitter Saturation Voltage
• For Complementary Use with PNP Type HMPSA92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... 300 V
VCEO Collector to Emitter Voltage ................................................................................... 300 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current....................................................................................................... 500 mA
(Ta=25°C)
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Min.
Typ.
Max.
Unit
V
V
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=260V, IE=0
300
300
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
100
350
900
-
-
-
-
3
V
nA
nA
mV
mV
IEBO
VEB=6V, IC=0
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
-
-
IC=20mA, IB=2mA
IC=20mA, IB=2mA
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=30mA, VCE=10V
IC=10mA, VCE=20V, f=100MHZ
VCB=20V, f=1MHz, IE=0
25
40
40
50
-
MHz
pF
Cob
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of Rank
Rank
NS
N
hFE1
>80
>25
hFE2
>120
>40
hFE3
>120
>40
VCE(sat)
<200mV
<350mV
HMPSA42
HSMC Product Specification