Datasheet > HMPSA26

HMPSA26

更新时间： 2024-09-23 22:48:35

品牌	Logo	应用领域
HSMC		晶体晶体管
页数	文件大小	规格书
3页	37K
描述
NPN SILICON TRANSISTOR

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数据手册

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HMPSA26 数据手册

Spec. No. : HE6308-B

Issued Date : 1992.09.09

Revised Date : 2000.10.01

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HMPSA26

NPN SILICON TRANSISTOR

Description

The HMPSA26 is designed for using in darligton transistor.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature ................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ........................................................................................ 50 V

VCES Collector to Emitter Voltage...................................................................................... 50 V

VEBO Emitter to BASE Voltage.......................................................................................... 10 V

IC Collector Current....................................................................................................... 500 mA

(Ta=25°C)

Characteristics

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IC=100uA, IE=0

IC=100uA, VBE=0

IE=10uA, IC=0

VCB=40V, IE=0

VCE=40V, VBE=0

VEB=10V, IC=0

IC=100mA, IB=100uA

VCE=5V, IC=100mA

VCE=5V, IC=10mA

VCE=5V, IC=100mA

BVCBO

BVCES

BVEBO

ICBO

ICES

IEBO

*VCE(sat)

VBE(on)

*hFE1

100

500

100

1.5

0.6

10K

*hFE2

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HSMC Product Specification

12 3

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