Datasheet > HMPSA06

HMPSA06

更新时间： 2024-01-08 22:14:41

品牌	Logo	应用领域
HSMC		晶体晶体管
页数	文件大小	规格书
4页	39K
描述
NPN SILICON TRANSISTOR

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数据手册

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HMPSA06 数据手册

Spec. No. : HE6302

Issued Date : 1992.09.09

Revised Date : 2002.02.21

Page No. : 1/4

HI-SINCERITY

MICROELECTRONICS CORP.

HMPSA06

NPN SILICON TRANSISTOR

Description

Amplifier transistor

TO-92

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature.................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C)................................................................................ 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ......................................................................................... 80 V

VCEO Collector to Emitter Voltage...................................................................................... 80 V

VEBO Emitter to Base Voltage.............................................................................................. 4 V

IC Collector Current........................................................................................................ 500 mA

Characteristics (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IC=100uA, IE=0

IC=1mA, IB=0

IE=100uA, IC=0

VCB=80V, IE=0

BVCBO

BVCEO

BVEBO

ICBO

100

0.25

1.2

ICEO

VCE=60V, IB=0

*VCE(sat)

*VBE(on)

*hFE1

IC=100mA, IB=10mA

IC=100mA, VCE=1V

IC=10mA, VCE=1V

IC=100mA, VCE=1V

IC=10mA, VCE=2V, f=100MHz

100

*hFE2

MHz

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

HMPsA06

HSMC Product Specification

12 3 4

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