Datasheet > HMPS8599

HMPS8599

更新时间： 2024-02-07 03:27:57

品牌	Logo	应用领域
HSMC		晶体晶体管
页数	文件大小	规格书
4页	42K
描述
PNP SILICON TRANSISTOR

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中文翻译

获取价格

技术参数
数据手册

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HMPS8599 技术参数

生命周期：	Obsolete	包装说明：	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	JEDEC-95代码：	TO-92
JESD-30 代码：	O-PBCY-T3	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	CYLINDRICAL	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	BOTTOM	Base Number Matches：	1

HMPS8599 数据手册

Spec. No. : HE6319-B

Issued Date : 1996.07.18

Revised Date : 2000.10.01

Page No. : 1/4

HI-SINCERITY

MICROELECTRONICS CORP.

HMPS8599

PNP SILICON TRANSISTOR

Description

HMPS8599 is designed for general purpose amplifier applications.

Features

• Low Collector-Emitter Saturation Voltage

• HMPS8599 is complementary to HMPS8099

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +125 °C

Junction Temperature ................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ....................................................................................... -80 V

VCES Collector to Emitter Voltage..................................................................................... -80 V

VEBO Emitter to Base Voltage ............................................................................................ -5 V

IC Collector Current...................................................................................................... -500 mA

(Ta=25°C)

Characteristics

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IC=-100uA, IE=0

IC=-10mA, IB=0

IE=-10uA, IC=0

VCB=-80V, IE=0

BVCBO

BVCEO

BVEBO

ICBO

IEBO

ICEO

*hFE1

*hFE2

*hFE3

*VCE(sat)1

*VCE(sat)2

VBE(on)

-80

-5

-100

300

VEB=-4V, IC=0

VCE=-60V, IB=0

100

IC=-1mA, VCE=-5V

IC=-10mA, VCE=-5V

IC=-100mA, VCE=-5V

IC=-100mA, IB=-5mA

IC=-100mA, IB=-10mA

IC=-10mA, VCE=-5V

VCE=-5V, IC=-10mA, f=100MHz

VCB=-5V, IE=0, f=1MHz

-0.4

-0.3

-0.8

MHz

-0.6

150

Cob

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HSMC Product Specification

12 3 4

中文翻译

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