Datasheet > HMPS751

HMPS751

更新时间： 2024-01-19 05:05:24

品牌	Logo	应用领域
HSMC		晶体晶体管
页数	文件大小	规格书
4页	42K
描述
PNP SILICON TRANSISTOR

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数据手册

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HMPS751 数据手册

Spec. No. : HE6317-B

Issued Date : 1992.09.09

Revised Date : 2000.10.01

Page No. : 1/4

HI-SINCERITY

MICROELECTRONICS CORP.

HMPS751

PNP SILICON TRANSISTOR

Description

Amplifier Transistor

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature ................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ....................................................................................... -80 V

VCEO Collector to Emitter Voltage .................................................................................... -60 V

VEBO Emitter to Base Voltage ............................................................................................ -5 V

IC Collector Current............................................................................................................. -2 A

(Ta=25°C)

Characteristics

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IC=-100uA, IE=0

IC=-10mA, IB=0

IE=-10uA, IE=0

VCB=-80V, IE=0

BVCBO

BVCEO

BVEBO

ICBO

-80

-60

-5

-0.1

-0.5

-0.3

-1.2

-1

IEBO

VEB=-4V, IC=0

*VCE(sat)1

*VCE(sat)2

*VBE(sat)

VBE(on)

*hFE1

IC=-2A, IB=-200mA

IC=-1A, IB=-100mA

IC=-1A, VCE=-2V

IC=-50mA, VCE=-2V

IC=-500mA, VCE=-2V

IC=-1A, VCE=-2

*hFE2

*hFE3

*hFE4

IC=-2A, VCE=-2V

VCE=-5V, IC=-50mA, f=100MHz

MHz

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HSMC Product Specification

12 3 4

中文翻译

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