Datasheet > HMPS6562

HMPS6562

更新时间： 2024-02-13 05:20:27

品牌	Logo	应用领域
HSMC		晶体晶体管
页数	文件大小	规格书
4页	41K
描述
PNP SILICON TRANSISTOR

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数据手册

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HMPS6562 数据手册

Spec. No. : HE6322-B

Issued Date : 1992.09.09

Revised Date : 2000.09.20

Page No. : 1/4

HI-SINCERITY

MICROELECTRONICS CORP.

HMPS6562

PNP SILICON TRANSISTOR

Description

The HMPS6562 is designed for audio transistor.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -50 ~ +150 °C

Junction Temperature ................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ....................................................................................... -25 V

VCEO Collector to Emitter Voltage .................................................................................... -25 V

VEBO Emitter to Base Voltage ............................................................................................ -5 V

IC Collector Current...................................................................................................... -500 mA

(Ta=25°C)

Characteristics

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IC=-100uA, IE=0

IC=-10mA, IB=0

IE=-100uA, IC=0

VCB=-20V, IE=0

BVCBO

BVCEO

BVEBO

ICBO

ICEO

IEBO

*VCE(sat)

VBE(on)

*hFE1

*hFE2

*hFE3

-25

-5

-100

-0.5

-1.2

VCE=-25V, IB=0

VEB=-4V, IC=0

IC=-500mA, IB=-50mA

VCE=-1V, IC=-500mA

VCE=-1V, IC=-10mA

VCE=-1V, IC=-100mA

VCE=-1V, IC=-500mA

VCE=-10V, IC=-10mA, f=30MHz

VCE=-10V, f=100KHz, IE=0

200

MHz

Cob

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HSMC Product Specification

12 3 4

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