Datasheet > HMPS650

HMPS650

更新时间： 2024-02-23 16:52:27

品牌	Logo	应用领域
HSMC		晶体晶体管
页数	文件大小	规格书
4页	42K
描述
NPN SILICON TRANSISTOR

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数据手册

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HMPS650 数据手册

Spec. No. : HE6327-B

Issued Date : 1992.09.09

Revised Date : 2000.09.20

Page No. : 1/4

HI-SINCERITY

MICROELECTRONICS CORP.

HMPS650

NPN SILICON TRANSISTOR

Description

The HMPS650 is designed for audio transistor.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature ................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ........................................................................................ 60 V

VCEO Collector to Emitter Voltage ..................................................................................... 40 V

VEBO Emitter to Base Voltage ............................................................................................. 5 V

IC Collector Current.............................................................................................................. 2 A

(Ta=25°C)

Characteristics

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IC=10mA, IB=0

IC=100uA, IE=0

IE=10uA, IC=0

VCB=60V, IE=0

BVCBO

BVCEO

BVEBO

ICBO

100

0.5

0.3

1.2

IEBO

VEB=4V, IC=0

*VCE(sat)1

*VCE(sat)2

VBE(on)

*VBE(sat)

*hFE1

IC=2A, IB=200mA

IC=1A, IB=100mA

VCE=2V, IC=1A

IC=1A, IB=100mA

VCE=2V, IC=50mA

VCE=2V, IC=500mA

VCE=2V, IC=1A

*hFE2

*hFE3

*hFE4

VCE=2V, IC=2A

VCE=5V, IC=50mA, f=100MHz

MHz

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HSMC Product Specification

12 3 4

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