HMMC-5025

更新时间： 2024-09-23 22:48:35

品牌	Logo	应用领域
安捷伦 - AGILENT		射频和微波射频放大器微波放大器
页数	文件大小	规格书
7页	153K
描述
2 - 50 GHz Distributed Amplifier

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中文翻译

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技术参数
数据手册

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HMMC-5025 技术参数

生命周期：	Obsolete	包装说明：	DIE OR CHIP
Reach Compliance Code：	unknown	风险等级：	5.17
Is Samacsys：	N	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	7 dB
最大输入功率 (CW)：	20 dBm	功能数量：	1
最大工作频率：	50000 MHz	最小工作频率：	2000 MHz
最低工作温度：	-55 °C	封装等效代码：	DIE OR CHIP
电源：	5 V	射频/微波设备类型：	WIDE BAND LOW POWER
子类别：	RF/Microwave Amplifiers	技术：	GAAS
Base Number Matches：	1

HMMC-5025 数据手册

2 – 50 GHz Distributed Amplifier

Technical Data

HMMC-5025

Features

• Frequency Range: 2 – 50 GHz

• Small Signal Gain: 8.5 dB

• P_-1dB@ 40 GHz: 12 dBm

• Noise Figure:

<6dB@2–35GHz

<10dB@35–50GHz

• Return Loss: In/Out: < -10 dB

Description

The HMMC-5025 was designed as

Chip Size:

1720x920µm(67.7x36.2mils)

± 10µm(± 0.4mils)

127± 15µm(5.0± 0.6mils)

80 x 80 µm (3.2 x 3.2 mils)

a generic wide band distributed

amplifier, covering the frequency

span 2 – 50 GHz. It consists of

seven stages. Each stage is made

up of two cascoded FETs with

gate peripheries of 48 mm per

FET. Both input and output ports

were designed to provide 50 ohm

terminations. Bonding pads are

provided in the layout to allow

amplifier operation at frequencies

lower than 2 GHz by means of

external circuit components.

Chip Size Tolerance:

Chip Thickness:

Pad Dimensions:

Absolute Maximum Ratings^[1]

Symbol

Parameters/Conditions

Positive Drain Voltage

Total Drain Current

First Gate Voltage

Units

Min.

Max.

7.0

V_DD

I_DD

170

V_G1

-3.5

-3.0

V_G2

Second Gate Voltage

DC Power Dissipation

CW Input Power

watts

dBm

°C

+3.0

1.2

P_DC

P_in

The HMMC-5025 is typically

biased at V_DD= 5 volts and

I_DD= 75mA.Thesecondgateis

internally biased by means of a

voltage divider network and an

a.c. ground.

T_ch

Operating Channel Temp.

Operating Case Temp.

Storage Temperature

+150

T_case

T_STG

°C

-55

-65

°C

+165

+300

Maximum Assembly Temp.

(for 60 seconds maximum)

T_max

°C

Note:

1. Operation in excess of any one of these conditions may result in permanent

damage to this device. T_A= 25°C except for T_ch, T_STG, and T_max

5965-5446E

6-40

12 3 4 5 6 7

中文翻译

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