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HMMC-1002 PDF预览

HMMC-1002

更新时间: 2024-09-23 22:48:35
品牌 Logo 应用领域
安捷伦 - AGILENT 射频和微波射频衰减器微波衰减器
页数 文件大小 规格书
8页 99K
描述
DC- 50 GHz Variable Attenuator

HMMC-1002 技术参数

生命周期:Transferred包装说明:DIE OR CHIP
Reach Compliance Code:unknown风险等级:5.29
Is Samacsys:N其他特性:0-26.5 GHZ SPECIFIED FREQUENCY RANGE
标称衰减:40 dB特性阻抗:50 Ω
构造:COMPONENT最大输入功率 (CW):16.99 dBm
最大工作频率:50000 MHz最小工作频率:
最高工作温度:125 °C最低工作温度:-55 °C
封装等效代码:DIE OR CHIP射频/微波设备类型:VARIABLE ATTENUATOR
子类别:RF/Microwave Attenuators技术:GAAS
Base Number Matches:1

HMMC-1002 数据手册

 浏览型号HMMC-1002的Datasheet PDF文件第2页浏览型号HMMC-1002的Datasheet PDF文件第3页浏览型号HMMC-1002的Datasheet PDF文件第4页浏览型号HMMC-1002的Datasheet PDF文件第5页浏览型号HMMC-1002的Datasheet PDF文件第6页浏览型号HMMC-1002的Datasheet PDF文件第7页 
DC50 GHz Variable Attenuator  
Technical Data  
HMMC-1002  
Features  
• Specified Frequency Range:  
DC -26.5GHz  
• Return Loss: 10 dB  
• Minimum Attenuation:  
2.0 dB  
• Maximum Attenuation:  
30.0 dB  
Description  
The HMMC-1002 is a monolithic,  
Chip Size:  
1470x610µm(57.9x24.0mils)  
± 10µm(± 0.4mils)  
127± 15µm(5.0± 0.6mils)  
60 x 70 µm (2.4 x 2.8 mils), or larger  
75 x 75 µm (3.0 x 3.0 mils), or larger  
voltage variable, GaAs IC attenua-  
tor that operates from DC to  
50 GHz. Itisfabricatedusing  
MWTC’s MMICB process which  
features an MBE epitaxial layer,  
backside ground vias, and FET  
gate lengths of approximately  
0.4 mm.Thevariableresistive  
elements of the HMMC-1002 are  
two 750 mm wide series FETs  
and four 200 mm wide shunt  
FETs. The distributed topology of  
the HMMC-1002 minimizes the  
parasitic effects of its series and  
shunt FETs, allowing the  
Chip Size Tolerance:  
Chip Thickness:  
RF Pad Dimensions:  
DC Pad Dimensions:  
Absolute Maximum Ratings[1]  
Symbol  
Parameters/Conditions  
DC Voltage to RF Ports  
V1 Control Voltage  
V1 Control Voltage  
DC In/DC Out  
Units  
Min.  
-0.6  
-5.0  
-5.0  
-0.6  
Max.  
+1.6  
+0.5  
+0.5  
+1.0  
17  
VDC-RF  
V
V
V
1
V
2
V
VDC  
Pin  
V
RF Input Power  
dBm  
HMMC-1002 to exhibit a wide  
dynamic range across its full  
bandwidth. An on-chip DC  
reference circuit may be used to  
maintain optimum VSWR for any  
attenuation setting or to improve  
the attenuation versus voltage  
linearity of the attenuator circuit.  
Minimum Ambient  
Operating Temperature  
Tmina  
Tmaxa  
°C  
°C  
-55  
-65  
Maximum Ambient  
Operating Temperature  
+125  
TSTG  
Tmax  
Storage Temperature  
°C  
°C  
+165  
+300  
Maximum Assembly Temp.  
Note:  
1. Operation in excess of any one of these conditions may result in permanent  
damage to this device.  
5965-5452E  
7-12  

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