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HMJE3055T

更新时间： 2024-11-26 22:33:07
品牌 Logo 应用领域
HSMC 晶体晶体管局域网
页数 文件大小 规格书
3页 38K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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中文翻译

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HMJE3055T 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：unknown风险等级：5.84
最大集电极电流 (IC)：10 A配置：Single
最小直流电流增益 (hFE)：5最高工作温度：150 °C
极性/信道类型：NPN最大功率耗散 (Abs)：75 W
子类别：Other Transistors表面贴装：NO
标称过渡频率 (fT)：2 MHzBase Number Matches：1

HMJE3055T 数据手册

 浏览型号HMJE3055T的Datasheet PDF文件第2页浏览型号HMJE3055T的Datasheet PDF文件第3页 
Spec. No. : HE6737-A  
Issued Date : 1993.09.24  
Revised Date : 1999.08.01  
Page No. : 1/3  
HI-SINCERITY  
MICROELECTRONICS CORP.  
HMJE3055T  
NPN EPITAXIAL PLANAR TRANSISTOR  
Description  
The HMJE3055T is designed for general purpose of amplifier and  
switching applications.  
(Ta=25°C)  
Absolute Maximum Ratings  
• Maximum Temperature  
Storage Temperature............................................................................................ -55 ~ +150 °C  
Junction Temperature ..................................................................................... 150 °C Maximum  
• Maximum Power Dissipation  
Total Power Dissipation (Tc=25°C).................................................................................... 75 W  
Total Power Dissipation (Ta=25°C) ................................................................................... 0.6 W  
• Maximum Voltages and Currents (Ta=25°C)  
BVCBO Collector to Base Voltage...................................................................................... 70 V  
BVCEO Collector to Emitter Voltage................................................................................... 60 V  
BVEBO Emitter to Base Voltage........................................................................................... 5 V  
IC Collector Current ........................................................................................................... 10 A  
IB Base Current .................................................................................................................... 6 A  
(Ta=25°C)  
Characteristics  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
IC=200mA, IB=0  
IC=10mA, IE=0  
IE=10mA, IC=0  
VCB=70V, IE=0  
VCE=70V, VEB(off)=1.5V  
VCE=30V, IB=0  
VEB=5V, IC=0  
IC=4A, IB=400mA  
IC=10A, IB=3.3A  
IC=4A, VCE=4V  
BVCEO  
BVCBO  
BVEBO  
ICBO  
ICEX  
ICEO  
60  
70  
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.  
1.  
V
V
V
mA  
mA  
uA  
mA  
V
700  
5
IEBO  
*VCE(sat)1  
*VCE(sat)2  
*VBE(on)  
*hFE1  
1.1  
8.0  
1.8  
100  
-
V
V
20  
5
2
IC=4A, VCE=4V  
IC=10A, VCE=4V  
VCE=10V, IC=500mA, f=0.5MHz  
*hFE2  
fT  
-
MHz  
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%  
HSMC Product Specification  
123

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