Datasheet > HMJE13009A

HMJE13009A

更新时间： 2024-11-24 03:42:19

品牌	Logo	应用领域
HSMC		晶体晶体管
页数	文件大小	规格书
6页	58K
描述
12 AMPERE NPN SILICON POWER TRANSISTOR

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数据手册

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HMJE13009A 数据手册

Spec. No. : HE200206

Issued Date : 2002.02.01

Revised Date : 2006.07.04

Page No. : 1/6

HI-SINCERITY

MICROELECTRONICS CORP.

HMJE13009A

12 AMPERE NPN SILICON POWER TRANSISTOR

Description

The HMJE13009A is designed for high-voltage, high-speed power switching

inductive circuits where fall time is critical. They are particularly suited for 115 and

220V switch-controls, Solenoid/Relay drivers and Deflectioncircuits.

TO-220AB

Specification Features

• V_CEO(sus)=400V

• Reverse Bias SOA with Inductive Loads @T_C=100°C

• Inductive Switching Matrix 3 to 12 Amp., 25 and 100°C…tc@8A, 100°C is 120ns(Typ.)

• 700V Blocking Capability

• SOA and Switching Applications Information

Absolute Maximum Ratings

Characteristic

Symbol

V_CEO(sus)

V_CBO

V_EBO

I_C

Max.

400

700

Unit

Vdc

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Vdc

Collector Current-Continuous

Collector Current-Peak*

Adc

I_CM

Adc

Base Current-Continuous

Base Current-Peak*

I_B

Adc

I_BM

Adc

Emitter Current-Continuous

Emitter Current-Peak

I_E

Adc

I_EM

Adc

Watts

mW/°C

Watts

mW/°C

°C

Total Power Dissipation@T_A=25°C

Derate above 25°C

P_D

Total Power Dissipation@T_C=25°C

Derate above 25°C

100

800

P_D

Operating and Storage Junction Temperature Range

TJ, Tstg

-65 to +150

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

Thermal Characteristics

Characteristic

Symbol

R_θJC

Max.

1.25

62.5

Unit

°C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Maximum Lead Temperature for Soldering Purposes:

1/8” from Case for 5 Seconds

R_θJA

T_L

275

°C

HMJE13009A

HSMC Product Specification

12 3 4 5 6

中文翻译

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