5秒后页面跳转
HMJE13003 PDF预览

HMJE13003

更新时间: 2024-09-24 22:05:11
品牌 Logo 应用领域
HSMC 晶体晶体管局域网
页数 文件大小 规格书
3页 41K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

HMJE13003 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

HMJE13003 数据手册

 浏览型号HMJE13003的Datasheet PDF文件第2页浏览型号HMJE13003的Datasheet PDF文件第3页 
Spec. No. : HT200210  
Issued Date : 2001.01.01  
Revised Date : 2002.05.08  
Page No. : 1/3  
HI-SINCERITY  
MICROELECTRONICS CORP.  
HMJE13003  
NPN EPITAXIAL PLANAR TRANSISTOR  
Description  
High Voltage, High Speed Power Switch  
Switch Regulators  
PWM Inverters and Motor Controls  
Solenoid and Relay Drivers  
Deflection Circuits  
TO-126  
Absolute Maximum Ratings (Ta=25°C)  
Maximum Temperatures  
Storage Temperature............................................................................................ -50 ~ +150 °C  
Junction Temperature...................................................................................... 150 °C Maximum  
Maximum Power Dissipation  
Total Power Dissipation (Tc=25°C) ..................................................................................... 40 W  
Maximum Voltages and Currents (Ta=25°C)  
VCEX Collector to Emitter Voltage .................................................................................... 700 V  
VCEO Collector to Emitter Voltage.................................................................................... 400 V  
VEBO Emitter to Base Voltage.............................................................................................. 9 V  
IC Collector Current ........................................................................................ Continuous 1.5 A  
IB Base Current............................................................................................. Continuous 0.75 A  
Characteristics (Ta=25°C)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
BVCEX  
BVCEO  
IEBO  
700  
400  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1
1
500  
1
3
1
1.2  
40  
25  
V
V
mA  
mA  
mV  
V
V
V
V
IC=1mA, VBE(off)=1.5V  
IC=10mA  
VEB=9V  
ICEX  
VCE=700V, VBE(off)=1.5V  
IC=0.5A, IB=0.1A  
IC=1A, IB=0.25A  
IC=1.5A, IB=0.5A  
IC=0.5A, IB=0.1A  
IC=1A, IB=0.25A  
IC=0.5A, VCE=2V  
IC=1A, VCE=2V  
*VCE(sat)1  
*VCE(sat)2  
*VCE(sat)3  
*VBE(sat)  
*VBE(sat)  
*hFE1  
8
5
*hFE2  
*Pulse Test: Pulse Width 380us, Duty Cycle2%  
HMJE13003  
HSMC Product Specification  

与HMJE13003相关器件

型号 品牌 获取价格 描述 数据表
HMJE13003D HSMC

获取价格

NPN EPITAXIAL PLANAR TRANSISTOR
HMJE13003T HSMC

获取价格

NPN EPITAXIAL PLANAR TRANSISTOR
HMJE13005 HSMC

获取价格

NPN EPITAXIAL PLANAR TRANSISTOR
HMJE13007 HSMC

获取价格

NPN EPITAXIAL PLANAR TRANSISTOR
HMJE13007A HSMC

获取价格

NPN EPITAXIAL PLANAR TRANSISTOR
HMJE13009A HSMC

获取价格

12 AMPERE NPN SILICON POWER TRANSISTOR
HMJE2955T HSMC

获取价格

PNP EPITAXIAL PLANAR TRANSISTOR
HMJE3055T HSMC

获取价格

NPN EPITAXIAL PLANAR TRANSISTOR
HMK105B7102KV8FE TAIYO YUDEN

获取价格

Medium-High Voltage MLCC for Telecommunications infrastructure and Industrial equipment /
HMK105B7102KV-F TAIYO YUDEN

获取价格

Capacitor, Ceramic, Chip, General Purpose, 10