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HMF8M16F8VS-90

更新时间： 2024-11-19 05:36:19
品牌 Logo 应用领域
HANBIT /
页数 文件大小 规格书
12页 417K
描述
FLASH-ROM MODULE 16MByte (8M x 16-Bit) , SMM 80Pin

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中文翻译

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HMF8M16F8VS-90 技术参数

生命周期：Contact Manufacturer包装说明：,
Reach Compliance Code：unknown风险等级：5.8
Base Number Matches：1

HMF8M16F8VS-90 数据手册

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HANBit  
HMF8M16F8VS  
FLASH-ROM MODULE 16MByte (8M x 16-Bit) , SMM 80Pin  
Part No. HMF8M16F8VS  
GENERAL DESCRIPTION  
The HMF8M16F8VS is a high-speed flash read only memory (FROM) module containing 8,388,608 words organized in an  
x16bit configuration. The module consists of eight 2M x 8 FROM mounted on a 80-pin, MMC connector FR4-printed circuit board.  
Commands are written to the command register using standard microprocessor write timings.  
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles  
also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is  
similar to reading from 12.0V flash or EPROM devices.  
Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or  
erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits.  
When FROM module is disable condition the module is becoming power standby mode, system designer can get low-power  
design. All module components may be powered from a single +3V DC power supply and all inputs and outputs are LVTTL-  
compatible.  
PIN ASSIGNMENT  
FEATURES  
w Part identification  
P1  
P2  
HMF8M16F8VS  
(Bottom boot block configuration)  
PIN Symbol PIN Symbol  
PIN  
1
Symbol  
VCC  
CE1*  
CE2*  
CE3*  
CE4*  
CE5*  
VSS  
CE6*  
CE7*  
NC  
PIN  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
Symbol  
VCC  
NC  
1
2
VCC  
NC  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
VCC  
DQ15  
DQ7  
DQ14  
DQ6  
DQ13  
VSS  
w Access time: 90, 100, 120ns  
w High-density 16MByte design  
w High-reliability, low-power design  
w Single + 3V to 3.6V power supply  
w 80-Pin Designed  
2
3
NC  
3
NC  
4
NC  
4
BYTE*  
OE*  
CE0*  
VSS  
A16  
A0  
5
NC  
5
40-Pin, 0.8mm Fine Pitch Connector P1,P2  
w Minimum 100,000 write cycle guarantee  
per sector  
6
RY_BY*  
VSS  
RESET*  
WE*  
A19  
6
7
7
o
8
DQ5  
DQ12  
DQ4  
DQ11  
DQ3  
DQ10  
VSS  
8
w 10-year data retention at 85 C  
w Flexible sector architecture  
w Embedded algorithms  
9
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
A18  
A17  
A7  
w Erase suspend / Erase resume  
A8  
NC  
A9  
NC  
OPTIONS  
MARKING  
A10  
NC  
A6  
w Timing  
VSS  
A11  
VSS  
NC  
VSS  
A5  
90ns access  
100ns access  
120ns access  
w Packages  
SMM 80-pin  
- 90  
DQ2  
DQ9  
DQ1  
DQ8  
DQ0  
VCC  
-100  
-120  
A12  
NC  
A4  
A13  
NC  
A3  
A14  
NC  
A2  
F
A15  
NC  
A1  
VCC  
VCC  
VCC  
FUNCTIONAL BLOCK DIAGRAM  
1
URL: www.hbe.co.kr  
REV.02(August,2002)  
HANBit Electronics Co., Ltd.  
1234567...12

中文翻译

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