HANBit
HMD8M32M16EBG
32Mbyte(8Mx32) 72-pin EDO MODE 2K Ref. SIMM Design 5V
Part No. HMD8M32M16EBG
GENERAL DESCRIPTION
The HMD8M32M16EBG is a 8M x 32bit dynamic RAM high density memory module. The module consists of sixteen
CMOS 4M x 4bit DRAMs in 24-pin SOJ packages mounted on a 72-pin, double-sided, FR-4-printed circuit board. A 0.1
or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM components. The module is a
single In-line Memory Module with edge connections and is intended for mounting in to 72-pin edge connector sockets. All
module components may be powered from a single 5V DC power supply and all inputs and outputs are TTL-compatible.
FEATURES
PIN ASSIGNMENT
w Part Identification
HMD8M32M16EB---- 2048 Cycles/32ms Ref. Solder
PIN SYMBOL PIN
SYMBOL
DQ22
DQ7
DQ23
A7
PIN SYMBOL
HMD8M32M16EBG-- 2048 Cycles/32ms Ref. Gold
w Access times : 50, 60ns
1
2
Vss
DQ0
DQ16
DQ1
DQ17
DQ2
DQ18
DQ3
DQ19
Vcc
NC
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
DQ8
DQ24
DQ9
w High-density 32MByte design
w Single + 5V ±0.5V power supply
w JEDEC standard PDpin and pinout
w EDO mode operation
3
4
DQ25
DQ10
DQ26
DQ11
DQ27
DQ12
DQ28
Vcc
5
NC
6
Vcc
w TTL compatible inputs and outputs
w FR4-PCB design
7
A8
8
A9
9
/RAS3
/RAS2
NC
OPTIONS
w Timing
MARKING
10
11
12
13
14
15
16
17
18
19
20
50ns access
60ns access
-5
-6
A0
NC
DQ29
DQ13
DQ30
DQ14
DQ31
DQ15
NC
A1
NC
A2
NC
w Packages
A3
Vss
72-pin SIMM
M
A4
/CAS0
/CAS2
/CAS3
/CAS1
/RAS0
A5
PRESENCE DETECT PINS
A6
Pin
50ns
NC
60ns
NC
A10
DQ4
PD1
PD1
PD2
PD3
PD4
PD2
Vss
Vss
Vss
Vss
NC
21
DQ20
45
/RAS1
69
PD3
22
23
24
DQ5
DQ21
DQ6
46
47
48
NC
/WE
NC
70
71
72
PD4
NC
NC
Vss
SIMM TOP VIEW
PERFORMANCE RANGE
Speed
TRAC
50ns
60ns
tCAC
13ns
15ns
tRC
tHPC
26ns
30ns
5
6
90ns
110ns
Note: A11 is not used for HMD8M32M16EB
URL:www.hbe.co.kr
REV.1.0 (August.2002)
- 1 -
HANBit Electronics Co.,Ltd.