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HMD16M72D9A-10L PDF预览

HMD16M72D9A-10L

更新时间: 2024-09-17 03:28:39
品牌 Logo 应用领域
HANBIT 动态存储器
页数 文件大小 规格书
9页 84K
描述
Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V

HMD16M72D9A-10L 数据手册

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HANBit  
HSD16M72D9A  
Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on  
16Mx8, 4Banks, 4K Ref., 3.3V  
Part No. HSD16M72D9A  
GENERAL DESCRIPTION  
The HSD16M72D9A is a 16M x 72 bit Synchronous Dynamic RAM high density memory module. The module consists  
of nine  
CMOS 4M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 168-pin glass-epoxy  
substrate. Two 0.33uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The  
HSD16M72D9A is a DIMM(Dual in line Memory Module) and is intended for mounting into 168-pin edge connector sockets.  
Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock  
cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high  
bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC  
power supply and all inputs and outputs are LVTTL-compatible.  
FEATURES  
Part Identification  
HSD16M72D9A-F/10L : 100MHz (CL=3)  
HSD16M72D9A-F/10 : 100MHz (CL=2)  
HSD16M72D9A-F/13 : 133MHz (CL=3)  
HSD16M72D9A-F/12 : 125MHz (CL=3)  
F means Auto & Self refresh with Low-Power (3.3V)  
Burst mode operation  
Auto & self refresh capability (4096 Cycles/64ms)  
LVTTL compatible inputs and outputs  
Single 3.3V ±0.3V power supply  
MRS cycle with address key programs  
- Latency (Access from column address)  
- Burst length (1, 2, 4, 8 & Full page)  
- Data scramble (Sequential & Interleave)  
All inputs are sampled at the positive going edge of the system clock  
The used device is 4M x 8bit x 4Banks SDRAM  
URL:www.hbe.co.kr  
REV.1.0 (August.2002)  
- 1 -  
HANBit Electronics Co.,Ltd.  

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