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HMC998LP5ETR PDF预览

HMC998LP5ETR

更新时间: 2024-02-25 23:32:43
品牌 Logo 应用领域
HITTITE 射频微波
页数 文件大小 规格书
10页 741K
描述
Wide Band Medium Power Amplifier, 100MHz Min, 20000MHz Max, 5 X 5 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, QFN-32

HMC998LP5ETR 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.83特性阻抗:50 Ω
构造:COMPONENT增益:9 dB
最大输入功率 (CW):27 dBm最大工作频率:20000 MHz
最小工作频率:100 MHz最高工作温度:85 °C
最低工作温度:-40 °C射频/微波设备类型:WIDE BAND MEDIUM POWER
Base Number Matches:1

HMC998LP5ETR 数据手册

 浏览型号HMC998LP5ETR的Datasheet PDF文件第2页浏览型号HMC998LP5ETR的Datasheet PDF文件第3页浏览型号HMC998LP5ETR的Datasheet PDF文件第4页浏览型号HMC998LP5ETR的Datasheet PDF文件第5页浏览型号HMC998LP5ETR的Datasheet PDF文件第6页浏览型号HMC998LP5ETR的Datasheet PDF文件第7页 
HMC998LP5E  
v00.0612  
GaAs pHEMT MMIC  
2 WATT POWER AMPLIFIER, 0.1 - 20 GHz  
Features  
Typical Applications  
Thꢃ HmC998lp5e ꢇꢆ ꢇdꢃaꢉ ꢊꢁꢄ:  
• Test Instumentation  
• Microwave Radio & VSAT  
• Military & Space  
p1dB outꢀut pꢁꢂꢃꢄ: +31 dBꢅ  
pꢆat outꢀut pꢁꢂꢃꢄ: +33 dBꢅ  
Hꢇgh Gaꢇꢈ: 11 dB  
outꢀut ip3: +41 dBꢅ  
• Telecom Infrastructure  
• Fiber Optics  
suꢀꢀꢉy Vꢁꢉtagꢃ: Vdd = +15V @ 500 ꢅA  
50 ohꢅ matchꢃd iꢈꢀut/outꢀut  
32 lꢃad 5x5 ꢅꢅ smT packagꢃ: 25 ꢅꢅ²  
Functional Diagram  
General Description  
Thꢃ HmC998lp5e ꢇꢆ  
a GaAꢆ ꢀHemT mmiC  
Distributed Power Amplifier which operates between  
0.1 and 20 GHz. The amplifier provides 11 dB of gain,  
+41 dBm output IP3, and +31 dBm of output power at  
1 dB gaꢇꢈ cꢁꢅꢀꢄꢃꢆꢆꢇꢁꢈ ꢂhꢇꢉꢃ ꢄꢃquꢇꢄꢇꢈg ꢁꢈꢉy 500 ꢅA  
from a +15V supply. The HMC998LP5E exihibits  
a
ꢆꢉꢇghtꢉy ꢀꢁꢆꢇtꢇvꢃ gaꢇꢈ ꢊꢄꢁꢅ 3 tꢁ 17 GHz ꢅakꢇꢈg ꢇt ꢇdꢃaꢉ  
for EW, ECM, Radar and test equipment applications.  
Thꢃ HmC998lp5e amplifier I/Os are internally  
ꢅatchꢃd tꢁ 50 ohꢅꢆ aꢈd ꢇꢆ ꢆuꢀꢀꢉꢇꢃd ꢇꢈ a ꢉꢃadꢉꢃꢆꢆ  
Qfn 5x5 ꢅꢅ ꢆuꢄꢊacꢃ ꢅꢁuꢈt ꢀackagꢃ.  
Electrical Specifications, TA = +25° C, Vdd =+15V, Vgg2 = +9.5V, Idd = 500 mA [1]  
paꢄaꢅꢃtꢃꢄ  
fꢄꢃquꢃꢈcy raꢈgꢃ  
mꢇꢈ.  
Tyꢀ.  
0.1 - 4  
11  
max.  
mꢇꢈ.  
Tyꢀ.  
4 - 16  
11  
max.  
mꢇꢈ.  
Tyꢀ.  
16 - 20  
12  
ꢅax  
Uꢈꢇtꢆ  
GHz  
dB  
Gaꢇꢈ  
8
8
9
Gaꢇꢈ fꢉatꢈꢃꢆꢆ  
0.3  
0.5  
0.012  
15  
0.5  
dB  
Gaꢇꢈ Vaꢄꢇatꢇꢁꢈ ovꢃꢄ Tꢃꢅꢀꢃꢄatuꢄꢃ  
iꢈꢀut rꢃtuꢄꢈ lꢁꢆꢆ  
0.006  
17  
0.017  
25  
dB/ °C  
dB  
outꢀut rꢃtuꢄꢈ lꢁꢆꢆ  
10  
15  
20  
dB  
outꢀut pꢁꢂꢃꢄ ꢊꢁꢄ 1 dB Cꢁꢅꢀꢄꢃꢆꢆꢇꢁꢈ (p1dB)  
satuꢄatꢃd outꢀut pꢁꢂꢃꢄ (pꢆat)  
28  
31  
28  
31  
26  
29  
dBꢅ  
dBꢅ  
33  
33  
31  
[2]  
41  
41  
40  
dBꢅ  
outꢀut Thꢇꢄd oꢄdꢃꢄ iꢈtꢃꢄcꢃꢀt (ip3)  
nꢁꢇꢆꢃ fꢇguꢄꢃ  
8
4.5  
5
dB  
Tꢁtaꢉ suꢀꢀꢉy Cuꢄꢄꢃꢈt  
500  
500  
500  
ꢅA  
[1] Adjust Vgg between -2 to 0V to achieve Idd = 500 mA typical.  
[2] mꢃaꢆuꢄꢃꢅꢃꢈt takꢃꢈ at pꢁut / tꢁꢈꢃ = +14 dBꢅ.  
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
1

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