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HMC950

更新时间: 2024-09-23 10:54:03
品牌 Logo 应用领域
HITTITE 射频和微波射频放大器微波放大器功率放大器高功率电源
页数 文件大小 规格书
10页 650K
描述
GaAs pHEMT MMIC 4 WATT POWER AMPLIFIER, 12 - 16 GHz

HMC950 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:compliantECCN代码:3A001.B.2.B
风险等级:5.71特性阻抗:50 Ω
构造:COMPONENT增益:26 dB
最大输入功率 (CW):27 dBmJESD-609代码:e4
最大工作频率:16000 MHz最小工作频率:12000 MHz
最高工作温度:85 °C最低工作温度:-55 °C
射频/微波设备类型:WIDE BAND HIGH POWER端子面层:Gold (Au)
Base Number Matches:1

HMC950 数据手册

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HMC950  
v01.1010  
GaAs pHEMT MMIC 4 WATT  
POWER AMPLIFIER, 12 - 16 GHz  
Typical Applications  
The HMC950 is ideal for:  
• Point-to-Point Radios  
• Point-to-Multi-Point Radios  
• VSAT & SATCOM  
Features  
Saturated Output Power: +37 dBm @ 23% PAE  
High Output IP3: +44.5 dBm  
High Gain: 28 dB  
3
DC Supply: +7V @ 2400 mA  
No External Matching Required  
Die Size: 3.24 x 4.5 x 0.1 mm  
• Military & Space  
Functional Diagram  
General Description  
The HMC950 is a four stage GaAs pHEMT MMIC  
4 Watt Power Amplifier which operates between 12  
and 16 GHz. The HMC950 provides 28 dB of gain,  
+37 dBm of saturated output power, and 23% PAE  
from a +7V power supply. The HMC950 exhibits  
excellent linearity and is optimized for high capacity  
point to point and point to multi-point radio systems.  
It is also ideal for 13.75 to 14.5 GHz Ku Band VSAT  
transmitters as well as SATCOM applications. The  
amplifier configuration and high gain make it an  
excellent candidate for last stage signal amplification  
before the antenna. All data is taken with the chip in a  
50 Ohm test fixture connected via (2) 0.025 mm (1 mil)  
diameter wire bonds of 0.31 mm (12 mil) length.  
Electrical Specifications, TA = +25° C  
Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = Vdd6 = Vdd7 = Vdd8 = +7V, Idd = 2400mA [1]  
Parameter  
Min.  
Typ.  
12 - 13  
28  
Max.  
Min.  
Typ.  
13 - 16  
28  
Max.  
Units  
GHz  
dB  
Frequency Range  
Gain  
26  
26  
Gain Variation Over Temperature  
Input Return Loss  
0.056  
17  
0.056  
16  
dB/ °C  
dB  
Output Return Loss  
17  
17  
dB  
Output Power for 1 dB Compression (P1dB)  
Saturated Output Power (Psat)  
Output Third Order Intercept (IP3)[2]  
34.5  
36.5  
37  
34.5  
36.5  
37  
dBm  
dBm  
dBm  
mA  
43  
44.5  
2400  
Total Supply Current (Idd)  
2400  
[1] Adjust Vgg between -2 to 0V to achieve Idd = 2400 mA typical.  
[2] Measurement taken at +7V @ 2400 mA, Pout / Tone = +24 dBm  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
3 - 1  

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