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HMC745LC3TR PDF预览

HMC745LC3TR

更新时间： 2024-11-05 20:56:47
品牌 Logo 应用领域
HITTITE 电信电信集成电路
页数 文件大小 规格书
8页 338K
描述
Telecom Circuit, 1-Func, CQCC16, ROHS COMPLIANT, CERAMIC, SMT-16

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中文翻译

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HMC745LC3TR 技术参数

生命周期：Transferred包装说明：HVQCCN,
Reach Compliance Code：unknownHTS代码：8542.39.00.01
风险等级：5.66JESD-30 代码：S-CQCC-N16
长度：3 mm功能数量：1
端子数量：16最高工作温度：85 °C
最低工作温度：-40 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装代码：HVQCCN封装形状：SQUARE
封装形式：CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE座面最大高度：0.92 mm
标称供电电压：3.3 V表面贴装：YES
电信集成电路类型：TELECOM CIRCUIT温度等级：INDUSTRIAL
端子形式：NO LEAD端子节距：0.5 mm
端子位置：QUAD宽度：3 mm
Base Number Matches：1

HMC745LC3TR 数据手册

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HMC745LC3  
v01.0413  
13 Gbps, FAST RISE TIME XOR / XNOR GATE  
w/ PROGRAMMABLE OUTPUT VOLTAGE & POSITIVE SUPPLY  
Typical Applications  
Features  
The HMC745LC3 is ideal for:  
Inputs Terminated Internally in 50 Ohms  
Differential & Singe-Ended Operation  
Fast Rise and Fall Times: 21 / 19 ps  
Low Power Consumption: 240 mW typ.  
• RF ATE Applications  
• Broadband Test & Measurement  
• Serial Data Transmission up to 13 Gbps  
• Digital Logic Systems up to 13 GHz  
3
Programmable Differential  
Output Voltage Swing: 600 - 1200 mV  
Propagation Delay: 95 ps  
Single Supply: +3.3 V  
16 Lead Ceramic 3x3 mm SMT Package: 9 mm2  
Functional Diagram  
General Description  
The HMC745LC3 is a XOR/XNOR gate function  
designed to support data transmission rates of up to 13  
Gbps, and clock frequencies as high as 13 GHz. The  
HMC745LC3 also features an output level control pin,  
VR, which allows for loss compensation or for signal  
level optimization.  
All input and output signals to the HMC745LC3 are  
terminated with 50 ohms to Vcc on-chip, and may  
be either AC or DC coupled. Inputs or outputs can  
be connected directly to a 50 ohm to Vcc terminated  
system, while DC blocking capacitors may be used  
if the terminating system is 50 ohms to ground. The  
HMC745LC3 operates from a single +3.3 V DC supply,  
and is available in a ceramic RoHS compliant 3x3 mm  
SMT package.  
Electrical Specifications, TA = +25 °C, Vcc = +3.3 V  
Parameter  
Conditions  
Min.  
3.0  
Typ.  
3.3  
72  
Max  
3.6  
Units  
V
Power Supply Voltage  
Power Supply Current  
Maximum Data Rate  
Maximum Clock Rate  
Input High Voltage  
Input Low Voltage  
Input Return Loss  
mA  
Gbps  
GHz  
V
13  
13  
2.8  
2.1  
3.8  
3.3  
V
Frequency <13 GHz  
Single-Ended, peak-to-peak  
Differential, peak-to-peak  
10  
550  
dB  
mVp-p  
mVp-p  
V
Output Amplitude  
1100  
3.25  
2
Output High Voltage  
Output Low Voltage  
Output Rise / Fall Time  
V
Differential, 20% - 80%  
21 / 19  
ps  
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
3 - 1  
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