Datasheet > HMC646LP2_09

HMC646LP2_09

更新时间： 2024-11-25 10:53:59

品牌	Logo	应用领域
HITTITE		开关
页数	文件大小	规格书
8页	241K
描述
GaAs MMIC 40W FAILSAFE SWITCH, 0.1 - 2.1 GHz

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HMC646LP2_09 数据手册

HMC646LP2 / 646LP2E

v02.1009

GaAs MMIC 40W FAILSAFE

SWITCH, 0.1 - 2.1 GHz

Typical Applications

Features

The HMC646LP2(E) is ideal for:

• LNA Protection & T/R Switching

• TD-SCDMA / 3G Infrastructure

• Satellite Subscriber Terminals

High Input P0.1dB: +46 dBm Tx

Low Insertion Loss: 0.4 dB

High IIP3: +74 dBm

Single Positive Control: 0/+3V to 0/+8V

Failsafe operation; Tx ‘On’ when unpowered

2x2mm DFN SMT Package

• Private Mobile Radio & Public Safety Handsets

• Automotive Telematics

General Description

Functional Diagram

The HMC646LP2(E) is an SPDT switch in a leadless

DFN surface mount plastic package for use in trans-

mit / receive and LNA protection applications which

require very low distortion and high power handling

of up to 40 watts with less than 10% duty cycle. This

robust switch can control signals from 100 - 2100

MHz* and is ideal for TD-SCDMA / 3G repeaters,

PMR, automotive telematics, and satellite subscriber

terminal applications. The design provides excep-

tional P0.1dB of +46 dBm and +74 dBm IIP3 on the

Transmit (Tx) port. The failsafe topology provides a

low loss path from Tx to RFC, when no DC power is

available.

Electrical Speciﬁcations, T_A= +25°C, Vdd= 5V, Vctl = 0/+5 Vdc, 50 Ohm System*

Parameter

Min.

Typ.

Max.

Min.

Typ.

Max.

Min.

Typ.

Max

Units

MHz

Frequency Range

Insertion Loss

869 - 960

1525 - 1661

2010 - 2025

Tx - RFC

RFC - Rx

0.3

0.4

0.6

0.7

0.6

0.8

0.9

1.1

0.7

1.3

1.0

1.7

Tx - RFC

RFC - Rx

Isolation

Tx - RFC

RFC - Rx

Return Loss

Input Power for 0.1 dB

Compression

Tx - RFC

RFC - Rx

dBm

Input Third Order

Intercept (Two-tone input

power = +17 dBm each tone)

Tx - RFC

RFC - Rx

dBm

Switching Characteristics

tRISE, tFALL (10/90% RF)

tON, (50% CTL to 90% RF)

tOFF (50% CTL to 10% RF)

100

320

100

320

100

320

* Speciﬁcations and data reﬂect HMC646LP2(E) measured using the respective application circuits for each

designated frequency band found herein

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

11 - 216

12 3 4 5 6 7 8

中文翻译

下载PDF

与HMC646LP2_09相关器件

型号	品牌	获取价格	描述	数据表
HMC646LP2E	HITTITE	获取价格	GaAs MMIC 40W FAILSAFE SWITCH, 0.1 - 2.1 GHz
HMC646LP2ETR	HITTITE	获取价格	SPDT, 2025MHz Max, 1 Func, 1.7dB Insertion Loss-Max, GAAS
HMC646LP2TR	HITTITE	获取价格	SPDT, 2025MHz Max, 1 Func, 1.7dB Insertion Loss-Max, GAAS
HMC647	HITTITE	获取价格	GaAs MMIC 6-BIT DIGITAL PHASE SHIFTER, 2.5 - 3.1 GHz
HMC6475	ADI	获取价格	宽带 MMIC VCO，带有缓冲放大器 3.90 - 7.50 GHz
HMC6475LC4B	ADI	获取价格	WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER
HMC6475LC4BTR	ADI	获取价格	WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER
HMC6475LC4BTR-R5	ADI	获取价格	WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER
HMC647A	ADI	获取价格	GaAs MMIC 6位数字移相器，2.5-3.1 GHz
HMC647ALP6E	ADI	获取价格	GaAs MMIC 6-BIT Digital Phase Shifter, 2.5-3.1 GHz

与HMC646LP2_09相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

40
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

32
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

60
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

56

产品中心

服务支持

精选活动

关于我们

帮助中心

HMC646LP2_09

HMC646LP2_09 数据手册

与HMC646LP2_09相关器件

与HMC646LP2_09相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HMC646LP2_09

HMC646LP2_09 数据手册

与HMC646LP2_09相关器件

与HMC646LP2_09相关文章

您还可以找

您在本页遇到什么问题？