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HMC633LC4TR PDF预览

HMC633LC4TR

更新时间: 2024-02-23 08:01:13
品牌 Logo 应用领域
HITTITE 射频微波
页数 文件大小 规格书
8页 336K
描述
Wide Band Low Power Amplifier, 1 Func, GAAS,

HMC633LC4TR 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:LCC24,.16SQ,20
针数:24Reach Compliance Code:compliant
风险等级:1.27安装特点:SURFACE MOUNT
功能数量:1端子数量:24
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:CERAMIC封装等效代码:LCC24,.16SQ,20
电源:5 V射频/微波设备类型:WIDE BAND LOW POWER
子类别:RF/Microwave Amplifiers表面贴装:YES
技术:GAASBase Number Matches:1

HMC633LC4TR 数据手册

 浏览型号HMC633LC4TR的Datasheet PDF文件第2页浏览型号HMC633LC4TR的Datasheet PDF文件第3页浏览型号HMC633LC4TR的Datasheet PDF文件第4页浏览型号HMC633LC4TR的Datasheet PDF文件第5页浏览型号HMC633LC4TR的Datasheet PDF文件第6页浏览型号HMC633LC4TR的Datasheet PDF文件第7页 
HMC633LC4  
v03.0514  
GaAs PHEMT MMIC DRIVER  
AMPLIFIER, 5.5 - 17 GHz  
Typical Applications  
The HMC633LC4 is ideal for:  
• Point-to-Point Radios  
Features  
Gain: 30 dB  
P1dB: +23 dBm  
• Point-to-Multi-Point Radios & VSAT  
• LO Driver for Mixers  
Saturated Power: +23.8 dBm @ 24% PAE  
Supply Voltage: +5V @180 mA  
50 Ohm Matched Input/Output  
24 Lead Ceramic 4x4mm SMT Package: 16mm2  
• Military & Space  
Functional Diagram  
General Description  
The HMC633LC4 is a GaAs PHEMT MMIC Driver  
Amplifier in a leadless 4x4 mm ceramic surface mount  
package which operates between 5.5 and 17 GHz.  
The amplifier provides up to 30 dB of gain, +30 dBm  
Output IP3, and +23 dBm of output power at 1 dB  
gain compression, while requiring 180 mA from a +5V  
supply. The HMC633LC4 is an ideal driver amplifier  
for microwave radio applications from 5.5 to 17 GHz  
and may be biased at +5V, 130 mA to provide 2 dB  
lower gain with improved PAE. The amplifier’s I/Os are  
DC blocked and matched to 50 Ohms with no external  
matching required.  
Electrical Specifications, TA = +25° C, Vdd1-4= 5V, Idd= 180mA [1]  
Parameter  
Min.  
Typ.  
5.5 - 9  
30  
Max.  
Min.  
25  
Typ.  
9 - 17  
28  
Max.  
Units  
GHz  
dB  
Frequency Range  
Gain  
26  
Gain Variation Over Temperature  
Input Return Loss  
Output Return Loss  
0.030  
22  
0.040  
0.030  
17  
0.040  
dB/ °C  
dB  
22  
15  
dB  
Output Power for 1 dB Compression (P1dB)  
Saturated Output Power (Psat)  
20  
23  
18  
21  
dBm  
dBm  
dBm  
dB  
23.8  
30  
22  
Output Third Order Intercept (IP3)  
29  
Noise Figure  
10  
7
Supply Current (Idd) (Idd = Idd1 + Idd2 + Idd3 + Idd4)  
[1] Adjust Vgg between -2 to 0V to achieve Idd= 180 mA typical.  
180  
180  
mA  
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
1

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