Datasheet > 射频和微波 > 射频/微波放大器> HMC616LP3E

HMC616LP3E

更新时间： 2024-02-23 20:49:05

品牌	Logo	应用领域
HITTITE		射频和微波射频放大器微波放大器
页数	文件大小	规格书
10页	351K
描述
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz

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技术参数
数据手册

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HMC616LP3E 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	LCC16,.12SQ,20	Reach Compliance Code：	unknown
风险等级：	5.87	安装特点：	SURFACE MOUNT
功能数量：	1	端子数量：	16
最高工作温度：	85 °C	最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY	封装等效代码：	LCC16,.12SQ,20
电源：	3/5 V	射频/微波设备类型：	WIDE BAND LOW POWER
子类别：	RF/Microwave Amplifiers	最大压摆率：	115 mA
表面贴装：	YES	技术：	GAAS
Base Number Matches：	1

HMC616LP3E 数据手册

HMC616LP3 / 616LP3E

v00.0508

GaAs SMT PHEMT LOW NOISE

AMPLIFIER, 175 - 660 MHz

Features

Typical Applications

The HMC616LP3(E) is ideal for:

• Cellular/3G and LTE/WiMAX/4G

• BTS & Infrastructure

Low Noise Figure: 0.5 dB

High Gain: 24 dB

High Output IP3: +37 dBm

Single Supply: +3V to +5V

50 Ohm Matched Input/Output

16 Lead 3x3mm QFN Package: 9 mm²

• Repeaters and Femtocells

• Public Safety Radio

• DAB Receivers

Functional Diagram

General Description

The HMC616LP3(E) is a GaAs PHEMT MMIC

Low Noise Ampliﬁer that is ideal for Cellular/3G and

LTE/WiMAX/4G basestation front-end receivers

operating between 175 and 660 MHz. The ampliﬁer

has been optimized to provide 0.5 dB noise ﬁgure,

24 dB gain and +37 dBm output IP3 from a single

supply of +5V. Input and output return losses are

excellent with minimal external matching and bias

decoupling components. The HMC616LP3(E) shares

the same package and pinout with the HMC617-

LP3(E)andHMC618LP3(E)LNAs.TheHMC616LP3(E)

can be biased with +3V to +5V and features an

externally adjustable supply current which allows the

designer to tailor the linearity performance of the LNA

for each application.

Electrical Speciﬁcations, T_A= +25° C, Rbias = 3.92k Ohms*

Vdd = +3 Vdc

Parameter

Vdd = +5 Vdc

Units

Min.

Typ.

175 - 230

22.5

Max.

Min.

Typ.

230 - 660

Max.

Min.

Typ.

175 - 230

Max.

Min.

Typ.

230 - 660

Max.

0.8

Frequency Range

Gain

MHz

Gain Variation Over Temperature

Noise Figure

0.002

0.5

0.005

0.5

dB/ °C

0.5

0.8

0.5

0.8

Input Return Loss

Output Return Loss

Output Power for 1 dB

Compression (P1dB)

dBm

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Supply Current (Idd)

8.5

15.5

12.5

17.5

15.5

19.5

dBm

115

* Rbias resistor sets current, see application circuit herein

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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