HMC606
v02.0109
GaAs InGaP HBT MMIC ULTRA LOW
PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
1
Typical Applications
Features
The HMC606 is ideal for:
• Radar, EW & ECM
• Microwave Radio
Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz
P1dB Output Power: +15 dBm
Gain: 14 dB
• Test Instrumentation
• Military & Space
Output IP3: +27 dBm
Supply Voltage: +5V @ 64 mA
50 Ohm Matched Input/Output
Die Size: 2.80 x 1.73 x 0.1 mm
• Fiber Optic Systems
Functional Diagram
General Description
The HMC606 is a GaAs InGaP HBT MMIC Distributed
Amplifier die which operates between 2 and 18 GHz.
With an input signal of 12 GHz, the amplifier provides
ultra low phase noise performance of -160 dBc/Hz at
10 kHz offset, representing a significant improvement
over FET-based distributed amplifiers. The HMC606
provides 14 dB of small signal gain, +27 dBm output
IP3 and +15 dBm of output power at 1 dB gain com-
pression while requiring 64 mA from a +5V supply.
The HMC606 amplifier I/Os are internally matched to
50 Ohms facilitating easy integration into Multi-Chip-
Modules (MCMs). All data is taken with the chip in a 50
Ohm test fixture connected via 0.025 mm (1mil) diam-
eter wire bonds of minimal length 0.31 mm (12 mils).
Electrical Specifications, TA = +25° C, Vcc1= Vcc2= 5V
Parameter
Min.
Typ.
2 - 12
14.0
1.0
Max.
Min.
10
Typ.
12 - 18
13
Max.
Units
GHz
dB
Frequency Range
Gain
11
Gain Flatness
1.0
dB
Gain Variation Over Temperature
Noise Figure
0.021
4.5
0.25
6.5
dB/ °C
dB
Input Return Loss
20
22
dB
Output Return Loss
15
15
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Phase Noise @ 100 Hz
Phase Noise @ 1 kHz
12
15
10
13
dBm
dBm
dBm
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
mA
18
15
27
22
-140
-150
-160
-170
64
-140
-150
-160
-170
64
Phase Noise @ 10 kHz
Phase Noise @ 1 MHz
Supply Current
95
95
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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